VT760-E3, VFT760-E3, VBT760-E3, VIT760-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.50 V at I = 5 A F F FEATURES TMBS Trench MOS Schottky technology TO-220AC ITO-220AC Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) Solder bath temperature 275 C maximum, 10 s, per JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA 2 2 1 package) 1 VT760 VFT760 Material categorization: for definitions of compliance PIN 1 PIN 1 please see www.vishay.com/doc 99912 PIN 2 CASE PIN 2 TYPICAL APPLICATIONS TO-263AB TO-262AA For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC K K converters and reverse battery protection. MECHANICAL DATA A Case: TO-220AC, ITO-220AC, TO-263AB and A TO-262AA NC K NC Molding compound meets UL 94 V-0 flammability rating VBT760 VIT760 Base P/N-E3 - RoHS-compliant, commercial grade NC K NC K Terminals: matte tin plated leads, solderable per A HEATSINK HEATSINK A J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: as marked PRIMARY CHARACTERISTICS Mounting Torque: 10 in-lbs maximum I 7.5 A F(AV) V 60 V RRM I 100 A FSM V at I = 7.5 A 0.60 V F F T max. 150 C J TO-220AC, ITO-220AC, Package TO-263AB, TO-262AA Circuit configuration Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOLVT760VFT760VBT760VIT760UNIT Maximum repetitive peak reverse voltage V 60 V RRM Maximum average forward rectified current (fig. 1) I 7.5 A F(AV) Peak forward surge current 8.3 ms single half sine-wave I 100 A FSM superimposed on rated load Non-repetitive avalanche energy 65 mJ fie E AS at T = 25 C, L = 60 mH J Peak repetitive reverse current I 1.0 A RRM at t = 2 s, 1 kHz, T = 38 C 2 C p J Isolation voltage (ITO-220AB only) V 1500 V AC from terminal to heat sink t = 1 min Operating junction and storage temperature range T , T -55 to +150 C J STG Revision: 16-Mar-18 Document Number: 89130 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VT760-E3, VFT760-E3, VBT760-E3, VIT760-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 1.0 mA T = 25 C V 60 (minimum) - V R A BR I = 5 A 0.58 - F T = 25 C A I = 7.5 A 0.67 0.80 F V F (1) Instantaneous forward voltage V I = 5 A 0.50 - F T = 125 C A I = 7.5 A 0.60 0.72 F I T = 25 C - 700 Ap A R (2) Reverse current V = 60 V R T = 125 C 6.6 25 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOLVT760VFT760VBT760VIT760UNIT Typical thermal resistance R 3.5 6.5 3.5 3.5 C/W JC ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AC VT760-E3/4W 1.87 4W 50/tube Tube ITO-220AC VFT760-E3/4W 1.68 4W 50/tube Tube TO-263AB VBT760-E3/4W 1.39 4W 50/tube Tube TO-263AB VBT760-E3/8W 1.39 8W 800/reel Tape and reel TO-262AA VIT760-E3/4W 1.45 4W 50/tube Tube Revision: 16-Mar-18 Document Number: 89130 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000