X-On Electronics has gained recognition as a prominent supplier of VFT6045CBP-M3/4W Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. VFT6045CBP-M3/4W Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

VFT6045CBP-M3/4W Vishay

VFT6045CBP-M3/4W electronic component of Vishay
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Part No.VFT6045CBP-M3/4W
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 60A 45V DUAL TrenchMOS
Datasheet: VFT6045CBP-M3/4W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.102 ea
Line Total: USD 3.1 
Availability - 2260
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2260
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 3.102
10 : USD 1.804
100 : USD 1.65
500 : USD 1.375
1000 : USD 1.331
2000 : USD 1.32
5000 : USD 1.298
25000 : USD 1.265

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Tradename
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VFT6045CBP-M3/4W from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VFT6045CBP-M3/4W and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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VFT6045CBP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V = 0.33 V at I = 10 A F F FEATURES TMBS Trench MOS Schottky technology ITO-220AB Low forward voltage drop, low power losses High efficiency operation Solder dip 275 C max. 10 s, per JESD 22-B106 T 200 C max. in solar bypass mode application J Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 2 1 TYPICAL APPLICATIONS VFT6045CBP For use in solar cell junction box as a bypass diode for PIN 1 PIN 2 protection, using DC forward current without reverse bias. PIN 3 MECHANICAL DATA PRIMARY CHARACTERISTICS Case: ITO-220AB I 2 x 30 A Molding compound meets UL 94 V-0 flammability rating F(AV) Base P/N-M3 - halogen-free, RoHS-compliant, and V 45 V RRM commercial grade I 320 A FSM V at I = 30 A 0.47 V Terminals: matte tin plated leads, solderable per F F T max. (AC mode) 150 C J-STD-002 and JESD 22-B102 OP M3 suffix meets JESD 201 class 1A whisker test T max. (DC forward current) 200 C J Package ITO-220AB Polarity: as marked Circuit configuration Common cathode Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VFT6045CBP UNIT Maximum repetitive peak reverse voltage V 45 V RRM per device 60 (1) Maximum average forward rectified current (fig. 1) I A F(AV) per diode 30 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode I 320 A FSM Isolation voltage from terminal to heatsink, t = 1 min V 1500 V AC Operating junction and storage temperature range (AC mode) T , T -40 to +150 C OP STG (2) Junction temperature in DC forward current without reverse bias, t 1 h T 200 C J Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 10 A 0.44 - F I = 15 A T = 25 C 0.47 - F A I = 30 A 0.54 0.64 F (1) Instantaneous forward voltage per diode V V F I = 10 A 0.33 - F I = 15 A T = 125 C 0.37 - F A I = 30 A 0.47 0.56 F T = 25 C - 3000 A A (2) Reverse current per diode V = 45 V I R R T = 125 C 18 50 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms Revision: 19-Mar-18 Document Number: 89370 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VFT6045CBP www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VFT6045CBPUNIT per diode 5.0 Typical thermal resistance R C/W JC per device 3.5 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE ITO-220AB VFT6045CBP-M3/4W 1.76 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 65 100 60 55 T = 150 C A 50 45 10 40 T = 100 C A 35 T = 125 C A 30 25 20 1 15 T = 25 C A 10 DC Forward Current at 5 Thermal Equilibrium 0 0.1 100 120 140 160 180 200 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Instantaneous Forward Voltage (V) Case Temperature (C) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 20 100 D = 0.5 T = 150 C D = 0.8 A 18 D = 0.3 T = 125 C A 16 10 14 T = 100 C A D = 0.2 12 1 10 D = 1.0 D = 0.1 8 T 0.1 6 T = 25 C A 4 0.01 2 D = t /T t p p 0 0.001 0 5 10 15 20 25 30 35 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode Revision: 19-Mar-18 Document Number: 89370 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Power Loss (W) DC Forward Rectified Current (A) Instantaneous Reverse Current (mA) Instantaneous Forward Current (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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