V40150C-E3, VF40150C-E3, VB40150C-E3, VI40150C-E3
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V = 0.55 V at I = 5 A
F F
FEATURES
TMBS
TO-220AB ITO-220AB
Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 C (for TO-263AB package)
3
3
Solder bath temperature 275 C maximum, 10 s,
2
2
1
per JESD 22-B106 (for TO-220AB, ITO-220AB
1
V40150C VF40150C
and TO-262AA package)
PIN 1 PIN 2 PIN 1 PIN 2
Material categorization: for definitions of compliance
PIN 3 CASE PIN 3
please see www.vishay.com/doc?99912
2
D PAK (TO-263AB) TO-262AA
K
K TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
2
converters and reverse battery protection.
1
3
2
MECHANICAL DATA
VB40150C VI40150C
1
PIN 1 2
PIN 1 K PIN 2
Case: TO-220AB, ITO-220AB, DPAK (TO-263AB),
K and TO-262AA
PIN 2 HEATSINK PIN 3
Molding compound meets UL 94 V-0 flammability rating
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DESIGN SUPPORT TOOLS
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable per
Models
J-STD-002 and JESD 22-B102
Available
E3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
PRIMARY CHARACTERISTICS
Mounting Torque: 10 in-lbs max.
I 2 x 20 A
F(AV)
V 150 V
RRM
I 160 A
FSM
V at I = 20 A 0.75 V
F F
T max. 150 C
J
TO-220AB, ITO-220AB,
Package
2
D PAK (TO-263AB), TO-262AA
Circuit configuration Common cathode
MAXIMUM RATINGS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL V40150C VF40150C VB40150C VI40150C UNIT
Max. repetitive peak reverse voltage V 150 V
RRM
per device I 40
F(AV)
Max. average forward rectified current
A
(fig. 1)
per diode I 20
F(AV)
Peak forward surge current 8.3 ms single half sine-wave
I 160 A
FSM
superimposed on rated load per diode
Non-repetitive avalanche energy at T = 25 C, L = 60 mH per diode E 150 mJ
J AS
Peak repetitive reverse current at t = 2 s, 1 kHz, T = 38 C 2 C
p J
I 0.5 A
RRM
per diode
Voltage rate of change (rated V ) dV/dt 10 000 V/s
R
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V 1500 V
AC
Operating junction and storage temperature range T , T -55 to +150 C
J STG
Revision: 19-Jun-2018 Document Number: 89048
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V40150C-E3, VF40150C-E3, VB40150C-E3, VI40150C-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER TEST CONDITIONSSYMBOLTYPMAX.UNIT
Breakdown voltage I = 1.0 mA T = 25 C V 150 (min.) - V
R A BR
I = 5 A 0.69 -
F
I = 10 A T = 25 C 0.84 -
F A
I = 20 A 1.15 1.43
F
(1)
Instantaneous forward voltage per diode V V
F
I = 5 A 0.55 -
F
I = 10 A T = 125 C 0.64 -
F A
I = 20 A 0.75 0.82
F
T = 25 C 2- A
A
V = 100 V
R
T = 125 C 2.5 - mA
A
(2)
Reverse current per diode I
R
T = 25 C - 250 A
A
V = 150 V
R
T = 125 C 5 25 mA
A
Notes
(1)
Pulse test: 300 s pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL V40150C VF40150C VB40150C VI40150C UNIT
Typical thermal resistance per diode R 1.8 4 1.8 1.8 C/W
JC
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB V40150C-E3/4W 1.89 4W 50/tube Tube
ITO-220AB VF40150C-E3/4W 1.75 4W 50/tube Tube
TO-263AB VB40150C-E3/4W 1.39 4W 50/tube Tube
TO-263AB VB40150C-E3/8W 1.39 8W 800/reel Tape and reel
TO-262AA VI40150C-E3/4W 1.46 4W 50/tube Tube
RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted)
A
50 20
D = 0.8
Resistive or Inductive Load
18 D = 0.5
V(B,I)40150C
D = 0.3
40 16
D = 0.2
14
30 12
VF40150C
D = 1.0
10
D = 0.1
20 8
T
6
10 4
2
D = t /T t
p p
Mounted on Specific Heatsink
0 0
02 4 6 8 10 12 14 16 18 20 22 24
0 25 50 75 100 125 150 175
Case Temperature (C) Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
Revision: 19-Jun-2018 Document Number: 89048
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Average Forward Rectified Current (A)
Average Power Loss (W)