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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.SB1245 Ultra Low VF Schottky Barrier Rectifier February 2015 SB1245 Ultra Low VF Schottky Barrier Rectifier Applications This device is designed for low voltage, high frequency inverters, free-wheeling and polarity protection applications. This is also designed as bypass diode for solar modules. Features UL Flammability Classification 94V-O Environment Standards MIL-S-19500/228 Compliant DO-201AD Low Power Loss, High Efficiency COLOR BAND DENOTES CATHODE High Surge Capacity Pb-free, RoHS Compliant Ordering Information Part Number Top Mark Package Packing Method SB1245 SB1245 DO-201AD Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit V Maximum Repetitive Reverse Voltage 45 V RRM V Maximum RMS Voltage 31 V RMS V Maximum DC Blocking Voltage 45 V DC I Maximum Average Forward Current 12 A F(AV) Peak Forward Surge Current, 8.3 ms Single Half-Sine-Wave, I 150 A FSM Superimposed on Rated Load (JEDEC Method) V Maximum Forward Voltage at I = 12 A 0.55 V F F T = 25C 0.1 J I Maximum DC Reverse Current at Rated V mA R DC T = 100C 10 J 2 2 I t Rating for Fusing (t<8.3 ms) 3.7 A sec Operating Junction Temperature Range -55 to +150 T C J Operating Junction Temperature Range, In DC Forward Mode -55 to +200 T Storage Temperature Range -55 to +175 C STG 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com SB1245 Rev. 1.3