SB120 thru SB160 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES Guardring for overvoltage protection Very small conduction losses Extremely fast switching Low forward voltage drop High forward surge capability High frequency operation DO-204AL (DO-41) Solder dip 275 C max. 10 s, per JESD 22-B106 Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage high frequency inverters, PRIMARY CHARACTERISTICS freewheeling, dc-to-dc converters, and polarity protection I 1.0 A F(AV) applications. V 20 V to 60 V RRM MECHANICAL DATA I 50 A FSM Case: DO-204AL (DO-41) V 0.48 V, 0.65 V F Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade T max. 125 C, 150 C J Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SB120 SB130 SB140 SB150 SB160 UNIT Maximum repetitive peak reverse voltage V 20 30 40 50 60 V RRM Maximum RMS voltage V 14 21 28 35 42 V RMS Maximum DC blocking voltage V 20 30 40 50 60 V DC Maximum average forward rectified current I 1.0 A F(AV) at 0.375 (9.5 mm) lead length (fig. 1) Peak forward surge current 8.3 ms single half I 50 A FSM sine-wave superimposed on rated load Voltage rate of change (rated V ) dV/dt 10 000 V/s R Operating junction temperature range T - 65 to + 125 - 65 to + 150 C J Storage temperature range T - 65 to + 150 C STG ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL SB120 SB130 SB140 SB150 SB160 UNIT Maximum instantaneous (1) 1.0 A V 0.48 0.65 V F forward voltage T = 25 C 0.50 A Maximum instantaneous reverse (1) I mA R current at rated DC blocking voltage T = 100 C 10 5.0 A Note (1) Pulse test: 300 s pulse width, 1 % duty cycle Document Number: 88715 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 16-Oct-09 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com 1 SB120 thru SB160 Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SB120 SB130 SB140 SB150 SB160 UNIT (1) R 50 JA Typical thermal resistance C/W (1) R 15 JL Note (1) Thermal resistance junction to lead P.C.B. mounted 0.375 (9.5 mm) lead length ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SB140-E3/54 0.35 54 5500 13 diameter paper tape and reel SB140-E3/73 0.35 73 3000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 1.0 100 SB150 and SB160 T = 125 C J 0.75 10 T = 150 C J Pulse Width = 300 s 1 % Duty Cycle SB120 to SB140 1 0.5 T = 25 C J 0.25 0.1 Resistive or Inductive Load SB120 thru SB140 0.375 (9.5 mm) Lead Length SB150 and SB160 0.01 0 25 50 75 175 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 100 125 150 Lead Temperature (C) Instantaneous Forward Voltage (V) Fig. 1 - Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics 50 100 T = T Max. SB120 thru SB140 J J 8.3 ms Single Half Sine-Wave SB150 and SB160 40 10 T = 125 C J 30 1 20 0.1 T = 75 C J 10 0.01 T = 25 C J 0.001 0 1 10 100 0 20 40 60 80 100 Number of Cycles at 60 Hz Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 4 - Typical Reverse Characteristics www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88715 2 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com Revision: 16-Oct-09 Peak Forward Surge Current (A) Average Forward Current (A) Instantaneous Reverse Current (mA) Instantaneous Forward Current (A)