SB3H90-E3/73 Vishay

SB3H90, SB3H100 www.vishay.com Vishay General Semiconductor High Voltage Schottky Plastic Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES Guardring for overvoltage protection Low power losses and high efficiency Low forward voltage drop Low leakage current High forward surge capabilitmy High frequency operation Solder dip 275 C max. 10 s, per JESD 22-B106 DO-201AD Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS For use in middle voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection I 3.0 A F(AV) applications. V 90 V, 100 V RRM I 100 A FSM MECHANICAL DATA V 0.65 V F Case: DO-201AD I 20 A R Molding compound meets UL 94 V-0 flammability rating T max. 175 C J Base P/N-E3 - RoHS-compliant, commercial grade Package DO-201AD Terminals: Matte tin plated leads, solderable per Diode variations Single J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SB3H90 SB3H100 UNIT Maximum repetitive peak reverse voltage V 90 100 V RRM Maximum working reverse voltage V 90 100 V RWM Maximum DC blocking voltage V 90 100 V DC Maximum average forward rectified current at T = 90 C I 3.0 A L F(AV) Peak forward surge current 8.3 ms single half sine-wave I 100 A FSM superimposed on rated load Peak repetitive reverse surge current at t = 2.0 s, 1 kHz I 1.0 A p RRM Critical rate of rise of reverse voltage dV/dt 10 000 V/s Storage temperature range T - 55 to + 175 C STG Maximum operating junction temperature T 175 C J Revision: 13-Aug-13 Document Number: 88720 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SB3H90, SB3H100 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL SB3H90 SB3H100 UNIT T = 25 C 0.80 Maximum instantaneous J (1) I = 3.0 A V V F F forward voltage T = 125 C 0.65 J T = 25 C 20 A Maximum reverse current J (2) I R at rated V R T = 125 C 4.0 mA J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SB3H90 SB3H100 UNIT (1) R 50 JA Maximum thermal resistance C/W (1) R 20 JL Note (1) PCB mounted with 0.2 x 0.2 (5.0 mm x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SB3H100-E3/54 1.09 54 1400 13 diameter paper tape and reel SB3H100-E3/73 1.09 73 1000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 100 4.0 T = T Max. J J Resistive or Inductive Load 8.3 ms Single Half Sine-Wave 0.375 (9.5 mm) Lead Length 80 3.0 60 2.0 40 1.0 20 0 10 0 25 50 75 100 125 150 175 1 10 100 Lead Temperature (C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 13-Aug-13 Document Number: 88720 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Peak Forward Surge Current (A)