SB1H100-E3/73 Vishay

SB1H90, SB1H100 www.vishay.com Vishay General Semiconductor High Voltage Schottky Plastic Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES High barrier technology for improved high T J Guardring for overvoltage protection Low power losses and high efficiency Low forward voltage drop Very low leakage current High forward surge capability DO-41 (DO-204AL) High frequency operation Solder dip 275 C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS For use in middle voltage high frequency inverters, I 1.0 A freewheeling, DC/DC converters, and polarity protection F(AV) V 90 V, 100 V applications. RRM I 50 A FSM MECHANICAL DATA V 0.62 V F Case: DO-41 (DO-204AL) I 1.0 A R Molding compound meets UL 94 V-0 flammability rating T max. 175 C J Base P/N-E3 - RoHS-compliant, commercial grade Package DO-41 (DO-204AL) Terminals: matte tin plated leads, solderable per Circuit configuration Single J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SB1H90 SB1H100 UNIT Maximum repetitive peak reverse voltage V 90 100 V RRM Maximum RMS voltage V 63 70 V RMS Maximum DC blocking voltage V 90 100 V DC Maximum average forward rectified current I 1.0 A F(AV) Peak forward surge current 8.3 ms single half sine-wave I 50 A FSM superimposed on rated load Voltage rate of change (rated V ) dV/dt 10 000 V/s R Peak repetitive reverse surge current at t = 2.0 s, 1 kHz I 1.0 A p RRM Maximum operating junction temperature T 175 C J Storage temperature range T -55 to +175 C STG Revision: 01-Jul-2020 Document Number: 88716 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SB1H90, SB1H100 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL SB1H90 SB1H100 UNIT T = 25 C 0.77 J I = 1.0 A F T = 125 C 0.62 J (1) Maximum instantaneous forward voltage V V F T = 25 C 0.86 J I = 2.0 A F T = 125 C 0.70 J T = 25 C 1.0 A J (2) Maximum reverse current at rated V I R R T = 125 C 0.5 mA J Notes (1) Pulse test: 300 ms pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL SB1H90 SB1H100 UNIT (1) R 57 JA Maximum thermal resistance C/W (1) R 15 JL Note (1) PCB mounted with 0.2 x 0.2 (5.0 mm x 5.0 mm) copper pad areas ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SB1H100-E3/54 0.34 54 5500 13 diameter paper tape and reel SB1H100-E3/73 0.34 73 3000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 1.2 100 T = 175 C J 1.0 10 T = 150 C J 0.8 0.6 1 T = 125 C J 0.4 T = 100 C J 0.1 0.2 T = 25 C J 0 0.01 0 25 50 75 100 125 150 175 200 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Case Temperature (C) Instantaneous Forward Voltage (V) Fig. 1 - Forward Current Derating Curve Fig. 2 - Typical Instantaneous Forward Characteristics Revision: 01-Jul-2020 Document Number: 88716 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Current (A) Instantaneous Forward Current (A)