SB2100E-G Comchip

ESD Leaded Schottky Barrier Rectifiers SB220E-G Thru. SB2100E-G Voltage: 20 to 100 V Current: 2.0 A RoHS Device DO-15 Features -Low drop down voltage. -For use in low voltage, high frequency invertors free wheeling and polarity protection. 1.0(25.4) Min. 0.142(3.6) -Silicon epitaxial planar chips. 0.102(2.6) -ESD test under IEC6100-4-2 : Standard: >15KV(Air) & 8KV(Contact) 0.299(7.6) 0.228(5.8) Mechanical data -Epoxy: UL94V-0 rated flame retardant -Case: Molded plastic body DO-15 1.0(25.4) Min. -Terminals: Solderable per MIL-STD-750 Method 2026 0.034(0.86) 0.028(0.70) -Polarity: Color band denotes cathode end -Mounting Position: Any Dimensions in inches and (millimeter) -Weight: 0.4grams Maximum Ratings and Electrical Characteristics Ratings at 25C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. SB SB SB SB SB SB SB Symbol Parameter Unit 220E-G 240E-G 245E-G 250E-G 260E-G 280E-G 2100E-G Maximum recurrent peak reverse voltage 20 40 45 50 60 80 100 VRRM V Maximum RMS voltage VRMS 14 28 30 35 42 56 70 V Maximum DC blocking voltage VDC 20 40 45 50 60 80 100 V Maximum average forward rectified current I(AV) A 2.0 0.375 (9.5mm) lead length at TA=75C, See Figure 1 Peak forward surge current 8.3ms single half sine-wave superimposed on rated load IFSM 50 A (JEDEC method) TL=110C Maximum forward voltage at 2.0A (Note 1) VF V 0.50 0.70 0.85 0.5 Maximum DC reverse current TA=25C IR mA At rated DC blocking voltage TA=100C 20 10 Typical junction capacitance (Note 2) pF CJ 170 R JA 50.0 Typical thermal resistance (Note 3) C/W R JL 25.0 Operating junction temperature range TJ -65 to +125 -65 to +150 C Storage temperature range TSTG -65 to +150 C NOTES: 1. Pulse test : 300S pulse width, 1% duty cycle. 2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts. 3. Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted 0.375 (9.5mm) lead length Company reserves the right to improve product design , functions and reliability without notice. REV:A QW-BB058 Page 1 Comchip Technology CO., LTD. ESD Leaded Schottky Barrier Rectifiers RATING AND CHARACTERISTIC CURVES (SB220E-G Thru. SB2100E-G) Fig.1 Forward Current Derating Curve Fig.2 Maximum Non-repetitive Peak Forward Surge Current 2.4 100 RESISTIVE OR INDUCTIVE LOAD 2.0 1.6 1.2 SB220E-G ~ SB260E-G 10 0.8 SB280E-G ~ SB2100E-G TL=110C single phase half wave 60Hz 8.3mS single half sine-wave 0.4 resistive or inductive load (JEDEC Method) 3.75(9.5mm) lead length 0 1 1 10 100 0 25 50 75 100 125 150 175 Lead Temperature (C) Number of Cycles at 60Hz Fig.3 Typical Instantaneous Forward Fig.4A Typical Reverse Characteristics Characteristics 10 100 SB220E-G ~ SB260E-G SB280E-G ~ SB2100E-G 10 TJ=125C SB250E-G ~ SB260E-G TJ=100C 1.0 1.0 SB220E-G ~ SB245E-G TJ=75C 0.1 0.01 TJ=25C 0.1 0.001 0 0.2 0.4 0.6 0.8 0 20 40 60 80 100 120 140 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig.5 Typical Junction Capacitance Fig.4B Typeical Reverse Characteristic 10000 1000 SB280E-G ~ SB2100E-G 1000 TJ=150C TJ=125C 100 100 TJ=100C 10 1.0 TJ=25C f=1.0MHz TJ=25C 0.1 10 0 20 40 60 80 100 0.1 1.0 10 100 Reverse Voltage (V) Percent of Rated Peak Reverse Voltage ( %) REV:A QW-BB058 Page 2 Comchip Technology CO., LTD. Junction Capacitacne (pF) Instantaneous Forward Current (A) Average Forward Current (A) Instantaneous Reverse Current (uA) Instantaneous Reverse Current (mA) Peak Forward Surge Current (A)