SB2003M-TL-W ON Semiconductor

LOT No. LOT No. Ordering number : EN8371C SB2003M Schottky Barrier Diode SB2003M Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Reverse Voltage V I =0.2mA 30 V R R I =1.0A 0.40 0.45 V F Forward Voltage V F I =2.0A 0.45 0.50 V F Reverse Current I V =15V 30 A R R Interterminal Capacitance C V =10V, f=1MHz 75 pF R Reverse Recovery Time t I =I =100mA, See specified Test Circuit. 20 ns rr F R When mounted in Cu-foiled area of Rth(j-a)1 93.4 C / W 2 1.44mm 0.03mm on glass epoxy substrate Thermal Resistance 2 Rth(j-a)2 When mounted on ceramic substrate (500mm 0.8mm) 71.4 C / W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. t Test Cicuit rr Duty 10% 50 100 10 10s --5V t rr Ordering Information Device Package Shipping memo SB2003M-TL-E MCPH6 3,000pcs./reel Pb-Free SB2003M-TL-W MCPH6 3,000pcs./reel Pb-Free and Halogen Free I -- V I -- V F F R R 7 10 7 5 5 3 2 3 1.0 7 2 5 3 2 0.1 1.0 7 5 7 3 2 5 0.01 7 5 3 3 2 2 0.001 7 5 3 0.1 2 7 0.0001 7 5 5 3 2 3 0.00001 7 2 5 3 2 0.01 0.000001 000.10.2 0.3 .4 0.50.6 0 5101520253035 Forward Voltage, V -- V IT08588 Reverse Voltage, V -- V IT08589 F R No.8371-2/4 Ta=125C 100C 75C 50C 25C 0C --25C Ta=125 C 100C 75 C 50C 25C 0C --25C Forward Current, I -- A F 100mA 100mA 10mA Reverse Current, I -- mA R