End of Life July-2021 - Alternative Device: VSMY98545ADS VSMY98545DS www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES Package type: surface-mount Double stack technology Package form: high power SMD with lens Dimensions (L x W x H in mm): 3.85 x 3.85 x 2.24 Peak wavelength: = 850 nm p Zener diode for ESD protection up to 2 kV High radiant power High radiant intensity Angle of half intensity: = 45 Designed for high drive currents: up to 1 A (DC) and up DESCRIPTION to 5 A pulses TM As part of the SurfLight portfolio, the VSMY98545DS is an Low thermal resistance: R = 10 K/W thJP infrared, 850 nm emitting diode based on surface emitter Floor life: 168 h, MSL 3, acc. J-STD-020 technology with high radiant power and high speed, molded Lead (Pb)-free reflow soldering in low thermal resistance SMD package with lens. A 42 mil Material categorization: for definitions of compliance chip provides outstanding radiant intensity and allows please see www.vishay.com/doc 99912 DC operation of the device up to 1 A. Superior ESD characteristics are ensured by an integrated Zener diode. APPLICATIONS Infrared illumination for CMOS cameras (CCTV) Illumination for cameras (3D gaming) Machine vision 3D TV PRODUCT SUMMARY t (ns) COMPONENT I (mW/sr) () (nm) e p r VSMY98545DS 600 45 850 30 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY98545DS Tape and reel MOQ: 600 pcs, 600 pcs/reel High power with lens Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 1A F Peak forward current t /T = 0.5, t = 100 s I 2A p p FM Surge forward current t = 100 s I 5A p FSM Power dissipation P 3.6 W V Junction temperature T 125 C j Operating temperature range T -40 to +110 C amb Storage temperature range T -40 to +125 C stg Soldering temperature According to Fig. 10, J-STD-20 T 260 C sd Thermal resistance junction-to-pin According to J-STD-051, soldered on PCB R 10 K/W thJP Rev. 1.1, 15-Jul-2020 Document Number: 84236 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000End of Life July-2021 - Alternative Device: VSMY98545ADS VSMY98545DS www.vishay.com Vishay Semiconductors 4 1 3.5 3 0.8 2.5 0.6 R = 10 K/W thJA 2 R = 10 K/W thJA 0.4 1.5 1 0.2 0.5 0 0 0 20406080 100 120 0 20406080 100 120 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 1 A, t = 20 ms V -3.2 3.6 V F p F Forward voltage I = 5 A, t = 100 s V -4.6 - V F p F Temperature coefficient of V I = 1 A TK --2.2- mV/K F F VF Reverse current V = 5 V I - - 10 A R R I = 1 A, t = 20 ms I 300 600 900 mW/sr F p e Radiant intensity I = 5 A, t = 100 s I -2800- mW/sr F p e Radiant power I = 1 A, t = 20 ms -1070- mW F p e Temperature coefficient of I = 1 A TK -- - %/K e F e Angle of half intensity - 45 - Peak wavelength I = 1 A 830 850 870 nm F p Spectral bandwidth I = 1 A -50- nm F Temperature coefficient of I = 1 A TK -0.3 - nm/K p F p Rise time I = 1 A t -30- ns F r Fall time I = 1 A t -30- ns F f Rev. 1.1, 15-Jul-2020 Document Number: 84236 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (W) V I - Forward Current (A) F