VSMY1850X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES Package type: surface mount Package form: 0805 Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 AEC-Q101 qualified Peak wavelength: = 850 Nm p High reliability High radiant power High radiant intensity High speed Angle of half sensitivity: = 60 21531 Suitable for high pulse current operation 0805 standard surface-mountable package Floor life: 168 h, MSL 3, according to J-STD-020 DESCRIPTION Lead (Pb)-free reflow soldering TM As part of the SurfLight portfolio, the VSMY1850X01 is an Material categorization: for definitions of compliance infrared, 850 nm emitting diode based on GaAlAs surface please see www.vishay.com/doc 99912 emitter chip technology with high radiant intensity, high optical power and high speed, molded in clear, untinted APPLICATIONS 0805 plastic package for surface mounting (SMD). IrDA compatible data transmission Miniature light barrier Photointerrupters Optical switch Emitter source for proximity sensors IR touch panels IR flash IR illumination 3D TV PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r VSMY1850X01 10 60 850 10 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY1850X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 Note MOQ: minimum order quantity Rev. 1.5, 30-Jun-16 Document Number: 83317 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSMY1850X01 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 190 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature According to Fig. 7, J-STD-020 T 260 C sd Thermal resistance junction / ambient JESD 51 R 270 K/W thJA 200 120 100 160 80 120 R = 270 K/W 60 R = 270 K/W thJA thJA 80 40 40 20 0 0 020 40 60 80 100 020 40 60 80 100 22109 T - Ambient Temperature (C) T - Ambient Temperature (C) 22108 amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V - 1.65 1.9 V F p F Forward voltage I = 1 A, t = 100 s V -2.9 - V F p F I = 1 mA TK --1.4 - mV/K F VF Temperature coefficient of V F I = 10 mA TK --1.18 - mV/K F VF Reverse current I Not designed for reverse operation A R V = 0 V, f = 1 MHz, R Junction capacitance C - 125 - pF J 2 E = 0 mW/cm I = 100 mA, t = 20 ms I 510 15 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I -85- mW/sr F p e Radiant power I = 100 mA, t = 20 ms e- 50 - mW F p Temperature coefficient of radiant I = 100 mA TK --0.35 - %/K F e power Angle of half intensity - 60 - deg Peak wavelength I = 100 mA 840 850 870 nm F p Spectral bandwidth I = 30 mA -30- nm F Temperature coefficient of I = 30 mA TK -0.25- nm/K p F p Rise time I = 100 mA, 20 % to 80 % t -10- ns F r Fall time I = 100 mA, 20 % to 80 % t -10- ns F f Virtual source diameter d - 0.5 - mm Rev. 1.5, 30-Jun-16 Document Number: 83317 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F