VSMG285011RG, VSMG285011G www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH FEATURES VSMG285011RG VSMG285011G Package type: surface mount Package form: GW, RGW Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 Peak wavelength: = 850 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 12 Low forward voltage Suitable for high pulse current operation Terminal configurations: Gullwing or reserve gullwing Package matches with detector VEMD2000X01 series DESCRIPTION Floor life: 4 weeks, MSL 2a, acc. J-STD-020 VSMG28511 series are infrared, 850 nm emitting diodes in Material categorization: for definitions of compliance GaAlAs (DH) technology with high radiant power and high please see www.vishay.com/doc 99912 speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). APPLICATIONS Data transmission IR-illumination (CCTV) Miniature light barrier Photointerrupters Optical switch Shaft encoders IR emitter source for proximity applications Smoke detectors PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r VSMG285011RG 40 12 850 20 VSMG285011G 40 12 850 20 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMG285011RG Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VSMG285011G Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note MOQ: minimum order quantity Rev. 1.0, 05-Aug-14 Document Number: 84229 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSMG285011RG, VSMG285011G www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Surge forward current t = 100 s I 1A p FSM Power dissipation P 180 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature Acc. figure 9, J-STD-020 T 260 C sd Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB R 250 K/W thJA 200 120 180 100 160 140 80 120 100 60 80 R = 250 K/W 40 R = 250 K/W thJA thJA 60 40 20 20 0 0 0 20 40 60 80 100 0 20 40 60 80 100 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 100 s V 1.25 1.5 1.8 V F p F Forward voltage I = 1 A, t = 100 s V 2.9 V F p F Temperature coefficient of V I = 1 mA TK -1.8 mV/K F F VF Reverse current V = 5 V I 10 A R R 2 Junction capacitance V = 0 V, f = 1 MHz, E = 0 mW/cm C 45 pF R J I = 100 mA, t = 100 s I 20 40 60 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I 320 mW/sr F p e Radiant power I = 100 mA, t = 100 s 40 mW F p e Temperature coefficient of I = 100 mA TK -0.35 %/K e F e Angle of half intensity 12 deg Peak wavelength I = 30 mA 830 850 870 nm F p Spectral bandwidth I = 30 mA 35 nm F Temperature coefficient of I = 30 mA TK 0.25 nm/K p F p Rise time I = 100 mA, 20 % to 80 % t 20 ns F r Fall time I = 100 mA, 20 % to 80 % t 20 ns F f Cut-off frequency I = 70 mA, I = 30 mA pp f 23 MHz DC AC c Rev. 1.0, 05-Aug-14 Document Number: 84229 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F