X-On Electronics has gained recognition as a prominent supplier of VSMG285011RG Infrared Emitters - High Power across the USA, India, Europe, Australia, and various other global locations. VSMG285011RG Infrared Emitters - High Power are a product manufactured by Vishay. We provide cost-effective solutions for Infrared Emitters - High Power, ensuring timely deliveries around the world.

VSMG285011RG Vishay

VSMG285011RG electronic component of Vishay
VSMG285011RG Vishay
VSMG285011RG Infrared Emitters - High Power
VSMG285011RG  Optoelectronics

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See Product Specifications
Part No. VSMG285011RG
Manufacturer: Vishay
Category: Infrared Emitters - High Power
Description: Vishay Semiconductors Infrared Emitters - High Power 1.5volt 40mW 850nm 12deg 100mA
Datasheet: VSMG285011RG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 2.9598
10 : USD 1.1083
100 : USD 0.6382
500 : USD 0.5182
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.9608
10 : USD 0.8062
100 : USD 0.4887
500 : USD 0.3954
1000 : USD 0.3347
2500 : USD 0.3193
12000 : USD 0.3193
24000 : USD 0.3193
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Wavelength
Radiant Intensity
Beam Angle
If - Forward Current
Vf - Forward Voltage
Power Rating
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Illumination Color
Series
Brand
Viewing Angle
Fall Time
Rise Time
Lens Shape
Cnhts
Hts Code
Mxhts
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Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VSMG285011RG from our Infrared Emitters - High Power category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VSMG285011RG and other electronic components in the Infrared Emitters - High Power category and beyond.

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VSMG285011RG, VSMG285011G www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, GaAlAs, DH FEATURES VSMG285011RG VSMG285011G Package type: surface mount Package form: GW, RGW Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 Peak wavelength: = 850 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 12 Low forward voltage Suitable for high pulse current operation Terminal configurations: Gullwing or reserve gullwing Package matches with detector VEMD2000X01 series DESCRIPTION Floor life: 4 weeks, MSL 2a, acc. J-STD-020 VSMG28511 series are infrared, 850 nm emitting diodes in Material categorization: for definitions of compliance GaAlAs (DH) technology with high radiant power and high please see www.vishay.com/doc 99912 speed, molded in clear, untinted plastic packages (with lens) for surface mounting (SMD). APPLICATIONS Data transmission IR-illumination (CCTV) Miniature light barrier Photointerrupters Optical switch Shaft encoders IR emitter source for proximity applications Smoke detectors PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r VSMG285011RG 40 12 850 20 VSMG285011G 40 12 850 20 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMG285011RG Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VSMG285011G Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note MOQ: minimum order quantity Rev. 1.0, 05-Aug-14 Document Number: 84229 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSMG285011RG, VSMG285011G www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Surge forward current t = 100 s I 1A p FSM Power dissipation P 180 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature Acc. figure 9, J-STD-020 T 260 C sd Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB R 250 K/W thJA 200 120 180 100 160 140 80 120 100 60 80 R = 250 K/W 40 R = 250 K/W thJA thJA 60 40 20 20 0 0 0 20 40 60 80 100 0 20 40 60 80 100 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 100 s V 1.25 1.5 1.8 V F p F Forward voltage I = 1 A, t = 100 s V 2.9 V F p F Temperature coefficient of V I = 1 mA TK -1.8 mV/K F F VF Reverse current V = 5 V I 10 A R R 2 Junction capacitance V = 0 V, f = 1 MHz, E = 0 mW/cm C 45 pF R J I = 100 mA, t = 100 s I 20 40 60 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I 320 mW/sr F p e Radiant power I = 100 mA, t = 100 s 40 mW F p e Temperature coefficient of I = 100 mA TK -0.35 %/K e F e Angle of half intensity 12 deg Peak wavelength I = 30 mA 830 850 870 nm F p Spectral bandwidth I = 30 mA 35 nm F Temperature coefficient of I = 30 mA TK 0.25 nm/K p F p Rise time I = 100 mA, 20 % to 80 % t 20 ns F r Fall time I = 100 mA, 20 % to 80 % t 20 ns F f Cut-off frequency I = 70 mA, I = 30 mA pp f 23 MHz DC AC c Rev. 1.0, 05-Aug-14 Document Number: 84229 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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Vishay / Cera-Mite
Vishay / Dale
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Vishay / Electro-Films
Vishay / Huntington
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Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
Vishay / Sfernice
Vishay / Siliconix
Vishay / Spectrol
Vishay / Sprague
Vishay / Tansitor
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Vishay / Thin Film
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Vishay Beyschlag
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VISHAY CERA-MITE
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Vishay Huntington Electric Inc.
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Vishay Micro-Measurements
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VISHAY ROEDERSTEIN
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Vishay Semiconductor Diodes Division
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VITRAMON (VISHAY)
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