VSMY9857535 Vishay

VSMY9857535 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES Package type: surface mount Package form: high power SMD with lens Dimensions (L x W x H in mm): 3.85 x 3.85 x 1.51 Peak wavelength: = 850 nm p High radiant power High radiant intensity Angle of half intensity: = 75 Designed for high drive currents: up to 1.0 A (DC) and up to 5 A pulses Low thermal resistance: R = 10 K/W thJP Floor life: 168 h, MSL 3, according to J-STD-020 DESCRIPTION Lead (Pb)-free reflow soldering TM As part of the SurfLight portfolio, the VSMY9857535 is an Material categorization: for definitions of compliance infrared, 850 nm emitting diode based on surface emitter please see www.vishay.com/doc 99912 technology with high radiant power and high speed, molded in low thermal resistance SMD package with lens. A 35 mil APPLICATIONS chip provides outstanding radiant intensity and allows Infrared illumination for CMOS cameras (CCTV, 3D DC operation of the device up to 1.0 A. gaming) Machine vision Bio identification PRODUCT SUMMARY t (ns) COMPONENT I (mW/sr) (deg) (nm) e p r VSMY9857535 180 75 850 30 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY9857535 Tape and reel MOQ: 600 pcs, 600 pcs/reel High power with lens Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 1A F Peak forward current t /T = 0.5, t = 100 s I 2A p p FM Surge forward current t = 100 s I 5A p FSM Power dissipation P 2.5 W V Junction temperature T 115 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -55 to +100 C stg Soldering temperature According to Fig. 10, J-STD-20 T 260 C sd Thermal resistance junction / pin JESD 51 R 10 K/W thJP Rev. 1.0, 05-Jul-16 Document Number: 84359 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSMY9857535 www.vishay.com Vishay Semiconductors 3.0 1.2 R = 10 K/W R = 10 K/W thJA thJA 2.5 1.0 2.0 0.8 1.5 0.6 1.0 0.4 0.5 0.2 0 0 0 20406080 100 0 20406080 100 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 1 A, t = 20 ms V -1.8 2.5 V F p F Forward voltage I = 5 A, t = 100 s V -2.7 - V F p F Temperature coefficient of V I = 100 mA TK --1.5- mV/K F F VF Reverse current V = 5 V I Not designed for reverse operation A R R I = 1 A, t = 20 ms I 100 180 - mW/sr F p e Radiant intensity I = 5 A, t = 100 s I -900 - mW/sr F p e Radiant power I = 1 A, t = 20 ms -630 - mW F p e Temperature coefficient of I = 100 mA TK - -0.13 - %/K e F e Angle of half intensity - 75 - deg Peak wavelength I = 1 A -850 - nm F p Spectral bandwidth I = 1 A -35- nm F Temperature coefficient of I = 100 mA TK -0.2 - nm/K p F p Rise time I = 1 A t -30- ns F r Fall time I = 1 A t -30- ns F f Rev. 1.0, 05-Jul-16 Document Number: 84359 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (W) V I - Forward Current (A) F