X-On Electronics has gained recognition as a prominent supplier of VSMY2850RG Infrared Emitters across the USA, India, Europe, Australia, and various other global locations. VSMY2850RG Infrared Emitters are a product manufactured by Vishay. We provide cost-effective solutions for Infrared Emitters, ensuring timely deliveries around the world.

VSMY2850RG Vishay

Hot VSMY2850RG electronic component of Vishay
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Part No.VSMY2850RG
Manufacturer: Vishay
Category: Infrared Emitters
Description: Infrared Emitters - High Power SurflightVCSEL 850nm 100mW/sr, +/-10deg.
Datasheet: VSMY2850RG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
6000: USD 0.3 ea
Line Total: USD 1800 
Availability - 69840
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ: 6000  Multiples: 6000
Pack Size: 6000
Availability Price Quantity
5820
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 1
Multiples : 1
1 : USD 0.357
10 : USD 0.3315
25 : USD 0.3308
100 : USD 0.3078
250 : USD 0.3069
500 : USD 0.306
1000 : USD 0.3051
3000 : USD 0.3041
6000 : USD 0.303

69840
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 6000
Multiples : 6000
6000 : USD 0.3
12000 : USD 0.2963
30000 : USD 0.2933

242
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9095
10 : USD 0.7545
30 : USD 0.6779
100 : USD 0.6013
500 : USD 0.4864
1000 : USD 0.4634

9764
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 0.8061
10 : USD 0.5439
100 : USD 0.4232
1000 : USD 0.3255
6000 : USD 0.322
24000 : USD 0.3151

5820
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 22
Multiples : 1
22 : USD 0.3315
25 : USD 0.3308
100 : USD 0.3078
250 : USD 0.3069
500 : USD 0.306
1000 : USD 0.3051
3000 : USD 0.3041
6000 : USD 0.303

69840
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 6000
Multiples : 6000
6000 : USD 0.3
12000 : USD 0.2963
30000 : USD 0.2933

34920
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 6000
Multiples : 6000
6000 : USD 0.5999
24000 : USD 0.5482
36000 : USD 0.5101

   
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RoHS - XON
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If - Forward Current
Vf - Forward Voltage
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We are delighted to provide the VSMY2850RG from our Infrared Emitters category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VSMY2850RG and other electronic components in the Infrared Emitters category and beyond.

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VSMY2850RG, VSMY2850G www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES VSMY2850RG VSMY2850G Package type: surface-mount Package form: GW, RGW Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 Peak wavelength: = 850 nm p High reliability High radiant power Very high radiant intensity DESCRIPTION Angle of half intensity: = 10 TM As part of the SurfLight portfolio, the VSMY2850 series Suitable for high pulse current operation are infrared, 850 nm emitting diodes based on GaAlAs Terminal configurations: gullwing or reverse gullwing surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, molded in Package matches with detector VEMD2500X01 series clear, untinted plastic packages (with lens) for surface Floor life: 4 weeks, MSL 2a, according to J-STD-020 mounting (SMD). Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS Miniature light barrier Photointerrupters Optical switch Emitter source for proximity sensors IR illumination PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e P r VSMY2850RG 125 10 850 10 VSMY2850G 125 10 850 10 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY2850RG Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VSMY2850G Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note MOQ: minimum order quantity Rev. 1.6, 31-Jul-2018 Document Number: 83398 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSMY2850RG, VSMY2850G www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 190 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature According to Fig. 10, J-STD-020 T 260 C sd Thermal resistance junction-to-ambient EIA / JESD51 R 250 K/W thJA 120 200 180 100 160 140 80 120 60 100 R = 250 K/W thJA 80 R = 250 K/W thJA 40 60 40 20 20 0 0 0 10 203040 50607080 90 100 0 1020 3040506070 8090 100 T - Ambient Temperature (C) 21890 21891 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V -1.6 1.9 V F p F Forward voltage I = 1 A, t = 100 s V -2.8 - V F p F Temperature coefficient of V I = 100 mA TK --1.5 - mV/K F F VF Reverse current I Not designed for reverse operation A R 2 Junction capacitance V = 0 V, f = 1 MHz, E = 0 mW/cm C -50- pF R J I = 100 mA, t = 20 ms I 70 125 210 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I - 1000 - mW/sr F p e Radiant power I = 100 mA, t = 20 ms -55- mW F p e Temperature coefficient of radiant I = 100 mA TK --0.12 - %/K F e power Angle of half intensity - 10 - deg Peak wavelength I = 100 mA 840 850 870 nm F p Spectral bandwidth I = 30 mA -30- nm F Temperature coefficient of I = 30 mA TK -0.25- nm/K p F p Rise time I = 100 mA, 10 % to 90 % t -10- ns F r Fall time I = 100 mA, 10 % to 90 % t -10- ns F f Rev. 1.6, 31-Jul-2018 Document Number: 83398 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
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