VSMY2941RGX01, VSMY2941GX01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 940 nm, Surface Emitter Technology FEATURES VSMY2941RGX01 VSMY2941GX01 Package type: surface-mount Package form: GW, RGW Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 Peak wavelength: = 940 nm p AEC-Q101 qualified High radiant power Very high radiant intensity Angle of half intensity: = 8 DESCRIPTION TM Terminal configurations: gullwing or reverse As part of the SurfLight portfolio, the VSMY2941X01 gullwing series are infrared, 940 nm emitting diodes based on GaAlAs surface emitter chip technology with extreme high radiant Package matches with detector VEMD2000X01 series intensities, high optical power and high speed, molded in Floor life: 4 weeks, MSL 2a, according to J-STD-020 clear, untinted plastic packages (with lens) for surface Material categorization: for definitions of compliance mounting (SMD). please see www.vishay.com/doc 99912 APPLICATIONS Miniature light barrier Photointerrupters Optical switch Emitter source for proximity sensors PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e P r VSMY2941RGX01 160 8 940 5 VSMY2941GX01 160 8 940 5 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY2941RGX01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VSMY2941GX01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 70 mA F Peak forward current t /T = 0.5, t = 100 s I 140 mA p p FM Surge forward current t = 100 s I 500 mA p FSM Power dissipation P 120 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature According to Fig. 10, J-STD-020 T 260 C sd Thermal resistance junction-to-ambient J-STD-051, soldered on PCB R 250 K/W thJA Rev. 1.0, 08-Nov-17 Document Number: 84573 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSMY2941RGX01, VSMY2941GX01 www.vishay.com Vishay Semiconductors 80 120 70 100 60 80 50 40 60 30 R = 250 K/W R = 250 K/W thJA 40 thJA 20 20 10 0 0 0 20406080 100 0 20406080 100 T - Ambient Temperature (C) amb T - Ambient Temperature (C) amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 50 mA, t = 20 ms V -1.4 1.7 V F p F Forward voltage I = 70 mA, t = 20 ms V -1.5 - V F p F I = 500 mA, t = 100 s V -2.6 - V F p F Temperature coefficient of V I = 50 mA TK --0.7 - mV/K F F VF Reverse current I Not designed for reverse operation A R 2 Junction capacitance V = 0 V, f = 1 MHz, E = 0 mW/cm C -30- pF R J I = 50 mA, t = 20 ms I 60 115 170 mW/sr F p e Radiant intensity I = 70 mA, t = 20 ms I - 160 - mW/sr F p e I = 500 mA, t = 100 s I - 850 - mW/sr F p e Radiant power I = 70 mA, t = 20 ms -40- mW F p e Temperature coefficient of radiant power I = 50 mA TK --0.2 - %/K F e Angle of half intensity - 8 - deg Peak wavelength I = 50 mA 920 940 960 nm F p Spectral bandwidth I = 70 mA -55- nm F Temperature coefficient of I = 70 mA TK -0.28 - nm/K p F p Rise time I = 70 mA, 10 % to 90 % t -5- ns F r Fall time I = 70 mA, 10 % to 90 % t -6- ns F f Rev. 1.0, 08-Nov-17 Document Number: 84573 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F