2018-02-05
IR SYNIOS P2720 (940 nm) - 120
Preliminary Version 0.0
SFH 4775S
Features:
IR lightsource with high efficiency
Double Stack emitter
Low thermal resistance (Max. 9 K/W)
Centroid wavelength 940 nm
Superior Corrosion Robustness (see chapter package outlines)
Applications
Infrared Illumination for cameras
Eye tracking systems
Not released for automotive applications
Notes
Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which
can be hazardous to the human eye. Products which incorporate these devices have to follow the safety
precautions given in IEC 60825-1 and IEC 62471.
Ordering Information
Type: Total Radiant Flux Ordering Code
[mW]
e
I = 1A, t = 10 ms
F p
SFH 4775S 1150 ( 800) Q65112A4691
Note: Measured with integrating sphere.
2018-02-05 1
Preliminary For Reference only.
Subject to change.Preliminary Version 0.0 SFH 4775S
Maximum Ratings (T = 25 C)
A
Parameter Symbol Values Unit
Operating temperature range T -40 ... 100 C
op
Storage temperature range T -40 ... 100 C
stg
Junction temperature T 145 C
j
Forward current I 1500 mA
F
Surge current I 3 A
FSM
(t 1.5 ms, D = 0.005)
p
Power consumption P 5800 mW
tot
ESD withstand voltage V 2 kV
ESD
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
Thermal resistance junction - solder point R 9 K / W
thJS
Note: For the forward current and power consumption please seemaximum permissible forward curren diagram
Characteristics (T = 25 C)
A
Parameter Symbol Values Unit
Peak wavelength (typ) 950 nm
peak
(I = 1 A, t = 10 ms)
F p
Centroid wavelength (typ) 940 nm
centroid
(I = 1 A, t = 10 ms)
F p
Spectral bandwidth at 50% of I (typ) 37 nm
max
(I = 1 A, t = 10 ms)
F p
Half angle (typ) 60
Dimensions of active chip area (typ) L x W 1 x 1 mm x
mm
Rise and fall times of I ( 10% and 90% of I ) (typ) t / t 11 / 14 ns
e e max r f
(I = 3 A, R = 50 )
F L
Forward voltage (typ (max)) V 2.8 ( 3.6) V
F
(I = 1 A, t = 10 ms)
F p
Forward voltage (typ (max)) V 2.95 ( 3.85) V
F
(I = 1.5 A, t = 100 s)
F p
Forward voltage (typ ) V 3.3 ( 4.7) V
F
(I = 3 A, t = 100 s)
F p
Reverse current I not designed for A
R
(V = 5 V) reverse operation
R
Radiant intensity I 360 mW/sr
e, typ
(I = 1 A, t = 10 ms)
F p
2018-02-05 2
Preliminary For Reference only.
Subject to change.