2016-04-13
IR OSLUX (810nm) - 26 / 8 tilted
Draft Version .2
SFH 4786S
Features:
IR lightsource with high efficiency
Double stack emitter
Low thermal resistance (Max. 25 K/W)
Centroid wavelength 810 nm
Small package dimensions (LxWxH): 3.5mm x 3.5mm x 1.6mm
Narrow half angle (+/- 13) / 8 tilted
Applications
Infrared Illumination
Notes
Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which
can be hazardous to the human eye. Products which incorporate these devices have to follow the safety
precautions given in IEC 60825-1 and IEC 62471.
Ordering Information
Type: Radiant Intensity Ordering Code
I [mW/sr]
e
I = 1 A, t = 10 ms
F p
SFH 4786S 1750 ( 1250) Q65111A8571
Note: measured at a solid angle of = 0.001 sr / the optical axis is tilted by 8
2016-04-13 1
DRAFT For Reference only.
Subject to change without notice.Draft Version .2 SFH 4786S
Maximum Ratings (T = 25 C)
A
Parameter Symbol Values Unit
Operation and storage temperature range T ; T -40 ... 85 C
op stg
Junction temperature T 145 C
j
Reverse voltage V 1 V
R
Forward current I 500 mA
F
Surge current I 2 A
FSM
(t 200 s, D = 0)
p
Power consumption P 1.8 W
tot
ESD withstand voltage V 2 kV
ESD
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
Thermal resistance junction - soldering point R 25 K / W
thJS
Note: For the forward current and power consumption please seemaximum permissible forward curren
diagram
Characteristics (T = 25 C)
A
Parameter Symbol Values Unit
Peak wavelength (typ) 820 nm
peak
(I = 1 A, t = 10 ms)
F p
Centroid wavelength (typ) 810 nm
centroid
(I = 1 A, t = 10 ms)
F p
Spectral bandwidth at 50% of I (typ) 30 nm
max
(I = 1 A, t = 10 ms)
F p
Half angle (typ) 13
Dimensions of active chip area (typ) L x W 0.75 x 0.75 mm x
mm
Rise and fall times of I ( 10% and 90% of I ) (typ) t / t 8/ 14 ns
e e max r f
(I = 1 A, R = 50 )
F L
Forward voltage (typ (max)) V 3.3 ( 3.6) V
F
(I = 0.5 A, t = 100 s)
F p
Forward voltage (typ (max)) V 3.55 ( 4) V
F
(I = 1 A, t = 100 s)
F p
Total radiant flux (typ) 680 mW
e
(I = 1 A, t = 100 s)
F p
Total radiant flux (typ) 600 mW
e
(I = 1 A, t = 10 ms)
F p
2016-04-13 2
DRAFT For Reference only.
Subject to change without notice.