VSMY3850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES Package type: surface mount Package form: PLCC-2 Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 Peak wavelength: = 850 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 60 948553 Suitable for high pulse current operation Floor life: 168 h, MSL 3, acc. J-STD-020 Lead (Pb)-free reflow soldering Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION TM As part of the SurfLight portfolio, the VSMY3850 is an RELEASED FOR APPLICATIONS infrared, 850 nm emitting diode based on surface emitter Infrared radiation source for operation with CMOS cameras technology with high radiant intensity, high optical power (illumination) and high speed, molded in a PLCC-2 package for surface High speed IR data transmission mounting (SMD). IR touch panels 3D TV Light curtain PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e P r VSMY3850 17 60 850 10 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY3850-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2 VSMY3850-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2 Note MOQ: minimum order quantity Rev. 1.5, 24-Sep-13 Document Number: 83399 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSMY3850 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Pulse peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 200 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature acc. figure 7, J-STD-020 T 260 C sd Thermal resistance junction/ambient J-STD-051, soldered on PCB R 250 K/W thJA 120 250 100 200 80 150 60 100 40 50 20 R = 250 K/W thJA R = 250 K/W thJA 0 0 0 20406080 100 0 20406080 100 T - Ambient Temperature (C) 22541 22542 amb T - Ambient Temperature (C) amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.6 2.0 V F p F Forward voltage I = 1 A, t = 100 s V 2.9 V F p F I = 1 mA TK -1.45 mV/K F VF Temperature coefficient of V F I = 10 mA TK -1.2 mV/K F VF Reverse current I not designed for reverse operation A R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 125 pF R j I = 100 mA, t = 20 ms I 12 17 25 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I 150 mW/sr F p e Radiant power I = 100 mA, t = 20 ms 55 mW F p e Temperature coefficient of I = 100 mA TK -0.35 %/K e F e Angle of half intensity 60 deg Peak wavelength I = 100 mA 840 850 870 nm F p Spectral bandwidth I = 30 mA 30 nm F Temperature coefficient of I = 100 mA TK 0.25 nm/K p F p Rise time I = 100 mA t 10 ns F r Fall time I = 100 mA t 10 ns F f Virtual source diameter d 0.44 mm Rev. 1.5, 24-Sep-13 Document Number: 83399 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F