VSMY5890X01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 890 nm, Surface Emitter Technology FEATURES Package type: surface-mount Package form: 0805 Dimensions (L x W x H in mm): 2 x 1.25 x 0.8 Peak wavelength: = 890 nm p AEC-Q101 qualified High speed Angle of half intensity: = 60 0805 standard surface-mountable package Floor life: 168 h, MSL 3, according t o J-STD-020 Lead (Pb)-free reflow soldering Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION APPLICATIONS TM As part of the SurfLight portfolio, the VSMY5890X01 is an infrared, 890 nm emitting diode based on GaAlAs surface Miniature light barrier emitter chip technology with high radiant intensity, high Automotive sensors optical power and high speed, in a low profile 0805 surfac e Optical switch mount (SMD) package. IR point source PRODUCT SUMMARY COMPONENT I (mW/sr) at I = 100 mA () (nm) t (ns) e F p r VSMY5890X01 13 60 890 7 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY5890X01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 Note MOQ: minimum order quantity Rev. 1.0, 11-Apr-2019 Document Number: 84952 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSMY5890X01 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.1, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 500 mA p FSM Power dissipation P 210 mW V Junction temperature T 125 C j Operating temperature range T -40 to +110 C amb Storage temperature range T -40 to +110 C stg Soldering temperature According to Fig. 7, J-STD-020 T 260 C sd Thermal resistance junction-to-ambient EIA / JESD51 R 280 K/W thJA Axis Title Axis Title 220 10000 110 10000 200 100 180 R = 280 K/W 90 R = 280 K/W thJA thJA 160 80 1000 1000 140 70 120 60 100 50 80 40 100 100 60 30 40 20 20 10 0 10 0 10 020 40 60 80 100 120 020 40 60 80 100 120 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 100 mA, t = 20 ms V -1.8 2.1 V F p F Temperature coefficient of V I = 100 mA, t = 20 ms TK --1.6 - mV/K F F p VF Reverse current I Not designed for reverse operation A R V = 0 V, f = 1 MHz, R Junction capacitance C -30- pF 2 J E = 0 mW/cm Radiant intensity I = 100 mA, t = 20 ms I 10 13 18 mW/sr F p e Temperature coefficient of radiant I = 100 mA, t = 20 ms TK - -0.2 - %/K F p e power Angle of half intensity - 60 - Peak wavelength I = 100 mA, t = 20 ms - 890 - nm F p p Spectral bandwidth I = 100 mA, t = 20 ms -40- nm F p Temperature coefficient of I = 100 mA, t = 20 ms TK -0.25- nm/K p F p p Rise time I = 100 mA, 10 % to 90 % t -8- ns F r Fall time I = 100 mA, 10 % to 90 % t -8- ns F f Rev. 1.0, 11-Apr-2019 Document Number: 84952 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2nd line P - Power Dissipation (mW) V 1st line 2nd line 2nd line I - Forward Current (mA) F 1st line 2nd line