VSMY98145DS www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 810 nm, Surface Emitter Technology FEATURES Package type: surface mount Double stack technology Package form: high power QFN with lens Dimensions (L x W x H in mm): 3.85 x 3.85 x 2.24 Peak wavelength: = 810 nm p Zener diode for ESD protection up to 2 kV High radiant power High radiant intensity Angle of half intensity: = 45 Designed for high drive currents: up to 1 A (DC) and up to DESCRIPTION 5 A pulses TM As part of the SurfLight portfolio, the VSMY98145DS is Low thermal resistance: R = 10 K/W an infrared, 810 nm emitting diode based on surface thJA emitter technology with high radiant power and high speed, Floor life: 168 h, MSL 3, according to J-STD-020 molded in low thermal resistance SMD package with lens. A Lead (Pb)-free reflow soldering 42 mil chip provides outstanding radiant intensity and Material categorization: for definitions of compliance allows DC operation of the device up to 1 A. Superior please see www.vishay.com/doc 99912 ESD characteristics are ensured by an integrated Zener diode. APPLICATIONS Infrared illumination for CMOS cameras (CCTV) Iris scan Machine vision PRODUCT SUMMARY t (ns) COMPONENT I (mW/sr) (deg) (nm) e p r VSMY98145DS 500 45 810 30 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY98145DS Tape and reel MOQ: 600 pcs, 600 pcs/reel High power with lens Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 1A F Surge forward current t = 10 s I 5A p FSM Power dissipation P 3.8 W V Junction temperature T 115 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -55 to +100 C stg Soldering temperature According to fig. 7, J-STD-20 T 260 C sd Thermal resistance junction / pin JESD51 R 10 K/W thJP Rev. 1.0, 17-May-16 Document Number: 84368 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSMY98145DS www.vishay.com Vishay Semiconductors 4.0 1.0 3.5 3.0 0.8 R = 10 K/W thJA R = 10 K/W thJA 2.5 0.6 2.0 0.4 1.5 1.0 0.2 0.5 0 0 0 20406080 100 0 20406080 100 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 1 A, t = 100 s V -3.3 3.8 V F p F Forward voltage I = 2 A, t = 100 s V -3.5 - V F p F Reverse current V = 5 V I - - 10 A R R I = 1 A, t = 100 s I 350 500 - mW/sr F p e Radiant intensity I = 2 A, t = 100 s I -950 - mW/sr F p e Radiant power I = 1 A, t = 20 ms -1000- mW F p e Angle of half intensity - 45 - deg Peak wavelength I = 1 A -810 - nm F p Spectral bandwidth I = 1 A -50- nm F Rise time I = 1 A t -30- ns F r Fall time I = 1 A t -30- ns F f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 10 1000 t = 100 s t = 100 s p p 1 100 0.1 10 2.0 3.0 4.0 100 1000 V - Forward Voltage (V) I - Forward Current (mA) F F Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - Radiant Intensity vs. Forward Current Rev. 1.0, 17-May-16 Document Number: 84368 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (A) P - Power Dissipation (W) F V I - Forward Current (A) I - Radiant Intensity (mW/sr) F e