Product Information

SIR-320ST3FF

SIR-320ST3FF electronic component of ROHM

Datasheet
Infrared Emitters - High Power IR 940nm GaAs LED 100mW Po; 18deg
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.5925 ea
Line Total: USD 1.59

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 1.5925
10 : USD 0.8147

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If - Forward Current
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Additional Infomation About Product

SIR-320ST3F Sensors Infrared light emitting diode, top view type SIR-320ST3F The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking it ideal for compact optical control equipment. External dimensions (Units : mm) Applications Optical control equipment 3.80.3 Light source for remote control devices 3.10.2 Notes: 1. Unspecified tolerance shall be 0.2. 2. Dimension in parenthesis are show for reference. Features 40.6 1) Compact (3.1mm). 2) High efficiency, high output PO=9.0mW (IF=50mA). 3) Wide radiation angle =18deg. 4) Emission spectrum well suited to silicon detectors 2 0.5 (P=940nm). 2 5) Good current-optical output linearity. 1 6) Long life, high reliability. (2.5) 1Anode 2Cathode Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Forward current IF 75 mA Reverse voltage VR 5 V Power dissipation PD 100 mW Pulse forward current IFP 1.0 A Operating temperature Topr 25~+85 C Storage temperature Tstg 40~+85 C Pulse width=0.1msec, duty ratio 1% 1/3 20.2 2.51 Max.1 1.1 Min.24 5.20.3SIR-320ST3F Sensors Electrical and optical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Optical output PO 9 mW IF=5mA Emitting strength IE 5.6 mW/sr IF=5mA Forward voltage VF 1.2 1.5 V IF=5mA Reverse current IR 10 A VR=3V Peak light emitting wavelength P 940 nm IF=5mA Spectral line half width 40 nm IF=5mA Half-viewing angle 1 / 2 18 deg IF=5mA Pesponse time trtf 1.0 s IF=5mA Cut-off frequency fC 1.0 MHz IF=5mA Electrical and optical characteristic curves 100 25C 100 100 0C 80 25C 80 80 50C 60 75C 60 60 40 40 40 20 20 20 0 0 0 01 2 850 900 950 1000 1050 20 0 20 40 60 80 100 FORWARD VOLTAGE : VF (V) OPTICAL WAVELENGTH : (nm) AMBIENT TEMPERATURE : Ta (C) Fig.2 Forward current vs. forward voltage Fig.3 Wavelength FIg.1 Forward current falloff 50 200 40 100 30 50 20 20 10 10 0 20 0 20 40 60 80 100 0 20 406080 100 AMBIENT TEMPERATURE : Ta (C) FORWARD CURRENT : IF (mA) Fig.5 Radiant intensity vs. Fig.4 Emitting strength vs. ambient temperature forward current 2/3 EMITTING STRENGTH : IE (mW/sr) FORWARD CURRENT : IF (mA) FORWARD CURRENT : IF (mA) RELATIVE EMITTING STRENGTH : IE (%) RELATIVE OPTICAL OUTPUT : PO (%)

HS Compliance

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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