X-On Electronics has gained recognition as a prominent supplier of SFH 4860 Infrared Emitters across the USA, India, Europe, Australia, and various other global locations. SFH 4860 Infrared Emitters are a product manufactured by OSRAM. We provide cost-effective solutions for Infrared Emitters, ensuring timely deliveries around the world.

SFH 4860 OSRAM

SFH 4860 electronic component of OSRAM
SFH 4860 OSRAM
SFH 4860 Infrared Emitters
SFH 4860  Optoelectronics

Images are for reference only
See Product Specifications
Part No. SFH 4860
Manufacturer: OSRAM
Category: Infrared Emitters
Description: Infrared Emitters Red 660 nm METAL CAN
Datasheet: SFH 4860 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 7.1788
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 7.597
10 : USD 5.0036
25 : USD 3.9307
100 : USD 3.5296
250 : USD 3.2489
500 : USD 3.0283
1000 : USD 3.0182
2500 : USD 2.9481
5000 : USD 2.8779
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 4.5449
4 : USD 3.8353
10 : USD 3.6254
25 : USD 3.5714
120 : USD 3.4866
N/A

Obsolete
0
MOQ : 120
Multiples : 120
120 : USD 4.7355
N/A

Obsolete
   
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RoHS - XON
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We are delighted to provide the SFH 4860 from our Infrared Emitters category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SFH 4860 and other electronic components in the Infrared Emitters category and beyond.

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2014-01-16 GaAlAs Light Emitting Diode (660 nm) GaAlAs-Lumineszensdiode (660 nm) Version 1.1 SFH 4860 Features: Besondere Merkmale: Fabricated in a liquid phase epitaxy process Hergestellt im Schmelzepitaxieverfahren Cathode is electrically connected to the case Kathode galvanisch mit dem Gehuseboden verbunden High reliability Hohe Zuverlssigkeit Matches all Si-Photodetectors Gute spektrale Anpassung an Si-Fotoempfnger Hermetically sealed package Hermetisch dichtes Metallgehuse Applications Anwendungen Photointerrupters Lichtschranken IR remote control IR-Gertefernsteuerung Sensor technology Sensorik Light curtains Lichtgitter Notes Hinweise Depending on the mode of operation, these devices Je nach Betriebsart emittieren diese Bauteile emit highly concentrated non visible infrared light hochkonzentrierte, nicht sichtbare which can be hazardous to the human eye. Products Infrarot-Strahlung, die gefhrlich fr das which incorporate these devices have to follow the menschliche Auge sein kann. Produkte, die diese safety precautions given in IEC 60825-1 and IEC Bauteile enthalten, mssen gem den 62471. Sicherheitsrichtlinien der IEC-Normen 60825-1 und 62471 behandelt werden. 2014-01-16 1Version 1.1 SFH 4860 Ordering Information Bestellinformation Type: Radiant Intensity Ordering Code Typ: Strahlstrke Bestellnummer I = 50 mA, t = 20 ms F p I mW/sr e SFH 4860 1.3 ( 0.63) Q62702P5053 Note: 18 A3 DIN 870 (TO-18), flat glass cap, lead spacing 2.54 mm (1/10) anode making: projection at package bottom Anm.: 18 A3 DIN 41876 (TO-18), Bodenplatte, Plankappe, Anschlsse im 2.54-mm-Raster (1/10) Anodenkennzeichnung: Nase am Gehuseboden Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operation and storage temperature range T T -40 ... 100 C op stg Betriebs- und Lagertemperatur Junction temperature T 125 C j Sperrschichttemperatur Reverse voltage V 3V R Sperrspannung Forward current I 50 mA F Durchlassstrom Surge current I 1A FSM Stostrom (t 10 s, D = 0) p Total power dissipation P 140 mW tot Verlustleistung Thermal resistance junction - ambient R 450 K / W thJA Wrmewiderstand Sperrschicht - Umgebung Thermal resistance junction - case R 160 K / W thJC Wrmewiderstand Sperrschicht - Gehuse ESD withstand voltage V 2kV ESD ESD Festigkeit 2014-01-16 2

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