End of Life May-2021 VSMY7852X01 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES Package type: surface-mount Package form: Little Star Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5 Peak wavelength: = 850 nm p 2078320783 High reliability High radiant power DESCRIPTION High radiant intensity TM As part of the SurfLight portfolio, the VSMY7852X01 is an Angle of half intensity: = 60 infrared, 850 nm emitting diode based on surface emitter Low forward voltage technology with high radiant power and high speed, molded in low thermal resistance Little Star package. A 20 mil chip Designed for high drive currents: up to 250 mA and up DC provides outstanding low forward voltage and allows DC to 1.5 A pulses operation of the device up to 250 mA. Low thermal resistance: R = 15 K/W THJP Floor life: 1 year, MSL 2, according to J-STD-020 APPLICATIONS Lead (Pb)-free reflow soldering Infrared illumination for CMOS cameras (CCTV) Material categorization: for definitions of compliance Machine vision IR data transmission please see www.vishay.com/doc 99912 PRODUCT SUMMARY COMPONENT I (mW/sr) () (nm) t (ns) e p r VSMY7852X01 55 60 850 8 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY7852X01-GS08 Tape and reel MOQ: 2000 pcs, 2000 pcs/reel Little Star Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 250 mA F Peak forward current t /T = 0.5, t = 100 s I 500 mA p p FM Surge forward current t = 100 s I 1.5 A p FSM Power dissipation P 500 mW V Junction temperature T 125 C j Operating temperature range T -40 to +100 C amb Storage temperature range T -40 to +100 C stg Soldering temperature According to Fig. 7, J-STD-20 T 260 C sd Thermal resistance junction-to-pin According to J-STD-051, soldered on PCB R 15 K/W thJP Rev. 1.9, 29-Jan-2021 Document Number: 81146 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000End of Life May-2021 VSMY7852X01 www.vishay.com Vishay Semiconductors 600 300 250 500 400 200 150 300 100 200 R = 15 K/W R = 15 K/W thJP thJP 100 50 0 0 0 20 40 60 80 100 120 0 20 40 60 80 100 120 T - Ambient Temperature (C) 21780 T - Ambient Temperature (C) 21779 amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 250 mA, t = 10 ms V -1.7 2.0 V F p F Temperature coefficient of V I = 1 mA TK --1.5- mV/K F F VF Reverse current V = 5 V I Not designed for reverse operation A R R Radiant intensity I = 250 mA, t = 10 ms I 30 55 90 mW/sr F p e Radiant power I = 250 mA, t = 20 ms -130 - mW F p e Temperature coefficient of I = 1 A TK - -0.5 - %/K e F e Angle of half intensity - 60 - Peak wavelength I = 250 mA -850 - nm F p Spectral bandwidth I = 250 mA -30- nm F Temperature coefficient of I = 250 mA TK -0.2 - nm/K p F p Rise time I = 250 mA t -8 - ns F r Fall time I = 250 mA t -10- ns F f Rev. 1.9, 29-Jan-2021 Document Number: 81146 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F