End of Life July-2021 - Alternative Device: VSMY3850X01 VSMG2720 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES Package type: surface-mount Package form: PLCC-2 Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 Peak wavelength: = 830 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 60 948553 Low forward voltage Suitable for high pulse current operation High modulation band width: f = 24 MHz c Good spectral matching with Si photodetectors DESCRIPTION Floor life: 168 h, MSL 3, acc. J-STD-020 VSMG2720 is an infrared, 830 nm emitting diode in GaAlAs Lead (Pb)-free reflow soldering double hetero (DH) technology with high radiant power and AEC-Q101 qualified high speed, molded in a PLCC-2 package for surface Material categorization: for definitions of compliance mounting (SMD). A 19 chip provides outstanding low please see www.vishay.com/doc 99912 forward voltage and radiant intensity even at 1 A pulse current. APPLICATIONS High speed IR data transmission High power emitter for low space applications High performance transmissive or reflective sensors PRODUCT SUMMARY COMPONENT I (mW/sr) () (nm) t (ns) e p r VSMG2720 14 60 830 15 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMG2720-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2 VSMG2720-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2 Note MOQ: minimum order quantity Rev. 1.4, 15-Jul-2020 Document Number: 81597 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000End of Life July-2021 - Alternative Device: VSMY3850X01 VSMG2720 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 160 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature According to Fig. 8, J-STD-020 T 260 C sd Thermal resistance junction-to-ambient J-STD-051, soldered on PCB R 250 K/W thJA 180 120 160 100 140 120 80 100 60 80 R = 250 K/W thJA R = 250 K/W thJA 60 40 40 20 20 0 0 0 1020 3040506070 8090100 0 10 203040 50607080 90 100 T - Ambient Temperature (C) 21343 amb 21344 - Ambient Temperature (C) T amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V - 1.45 1.6 V F p F Forward voltage I = 1 A, t = 100 s V -2.1 - V F p F Temperature coefficient of V I = 1 mA TK --1.8- mV/K F F VF Reverse current V = 5 V I - - 10 A R R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C -125 - pF R j I = 100 mA, t = 20 ms I 814 24 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I -135 - mW/sr F p e Radiant power I = 100 mA, t = 20 ms -45- mW F p e Temperature coefficient of I = 100 mA TK - -0.35 - %/K e F e Angle of half intensity - 60 - Peak wavelength I = 100 mA -830 - nm F p Spectral bandwidth I = 100 mA -40- nm F Temperature coefficient of I = 100 mA TK -0.25- nm/K p F p Rise time I = 100 mA t -15- ns F r Fall time I = 100 mA t -15- ns F f Cut-off frequency I = 70 mA, I = 30 mA pp f -24- MHz DC AC c Virtual source diameter d - 0.67 - mm Rev. 1.4, 15-Jul-2020 Document Number: 81597 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F