End of Life May-2021 VSMY7850X01 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES Package type: surface-mount Package form: Little Star Dimensions (L x W x H in mm): 6.0 x 7.0 x 1.5 Peak wavelength: = 850 nm p High reliability High radiant power High radiant intensity Angle of half intensity: = 60 Low forward voltage Designed for high drive currents: up to 1 A and up to DC 2178321783 5 A pulses Low thermal resistance: R = 10 K/W thJP Floor life: 1 year, MSL 2, according to J-STD-020 DESCRIPTION Lead (Pb)-free reflow soldering TM As part of the SurfLight portfolio, the VSMY7850X01 is an Material categorization: for definitions of compliance infrared, 850 nm emitting diode based on surface emitter please see www.vishay.com/doc 99912 technology with high radiant power and high speed, molded in low thermal resistance Little Star package. A 42 mil chip APPLICATIONS provides outstanding low forward voltage and allows DC Infrared illumination for CMOS cameras (CCTV) operation of the device up to 1 A. Machine vision IR data transmission 3D TV PRODUCT SUMMARY t (ns) COMPONENT I (mW/sr) () (nm) e p r VSMY7850X01 200 60 850 15 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY7850X01-GS08 Tape and reel MOQ: 2000 pcs, 2000 pcs/reel Little Star Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 1A F Peak forward current t /T = 0.5, t = 100 s I 2A p p FM Surge forward current t = 100 s I 5A p FSM Power dissipation P 2.5 W V Junction temperature T 125 C j Operating temperature range T -40 to +100 C amb Storage temperature range T -40 to +100 C stg Soldering temperature According to Fig. 7, J-STD-20 T 260 C sd Thermal resistance junction-to-pin According to J-STD-051, soldered on PCB R 10 K/W thJP Rev. 1.8, 29-Jan-2021 Document Number: 81145 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000End of Life May-2021 VSMY7850X01 www.vishay.com Vishay Semiconductors 3 1.2 2.5 1.0 2 0.8 1.5 0.6 1 0.4 R = 10 K/W R = 10 K/W thJP thJP 0.5 0.2 0 0 0 20406080 100 120 0 20406080 100 120 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 1 A, t = 20 ms V -2.0 2.5 V F p F Temperature coefficient of V I = 1 A TK --0.2- mV/K F F VF Reverse current V = 5 V I not designed for reverse operation A R R Radiant intensity I = 1 A, t = 20 ms I 130 200 390 mW/sr F p e Radiant power I = 1 A, t = 20 ms -800 - mW F p e Temperature coefficient of I = 1 A TK - -0.5 - %/K e F e Angle of half intensity - 60 - Peak wavelength I = 1 A -850 - nm F p Spectral bandwidth I = 1 A -30- nm F Temperature coefficient of I = 1 A TK -0.2 - nm/K p F p Rise time I = 1 A t -15- ns F r Fall time I = 1 A t -18- ns F f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 10 t = 100 s t = 100 s p p 1 100 0.1 10 0.01 0.001 1 0.01 0.1 1 10 01234 V - Forward Voltage (V) I - Forward Current (A) F F Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - Radiant Intensity vs. Forward Current Rev. 1.8, 29-Jan-2021 Document Number: 81145 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (A) P - Power Dissipation (W) F V I - Radiant Intensity (mW/sr) e I - Forward Current (A) F