VSMY14940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 940 nm, Surface Emitter Technology FEATURES Package type: surface-mount Package form: side view Dimensions (L x W x H in mm): 3.0 x 2.51 x 1.2 Peak wavelength: = 940 nm p High reliability High radiant power Very high radiant intensity Angle of half intensity: = 9 Suitable for high pulse current operation DESCRIPTION Floor life: 168 h, MSL 3, according to J-STD-020 TM As part of the SurfLight portfolio, the VSMY14940 is an Material categorization: for definitions of compliance infrared, 940 nm, side looking emitting diode based on please see www.vishay.com/doc 99912 GaAlAs surface emitter chip technology with extreme high radiant intensities, high optical power and high speed, molded in clear, untinted PCB based package (with lens) for surface mounting (SMD). APPLICATIONS Emitter for remote control (38 kHz) Learning remote control Photointerrupters Optical switch PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r VSMY14940 90 9 940 5 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY14940 Tape and reel MOQ: 1500 pcs, 1500 pcs/reel Side view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 70 mA F Surge forward current t = 100 s I 0.7 A p FSM Power dissipation P 119 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -55 to +100 C stg Soldering temperature According to Fig. 10, J-STD-020 T 260 C sd Thermal resistance junction-to-ambient J-STD-051, soldered on PCB R 390 K/W thJA Rev. 1.6, 22-Sep-17 Document Number: 84209 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSMY14940 www.vishay.com Vishay Semiconductors 140 80 70 120 60 100 50 80 40 60 30 40 R = 390 K/W R = 390 K/W thJA thJA 20 20 10 0 0 0 102030405060708090 100 0 102030405060708090 100 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 20 mA, t = 20 ms V 1.1 1.3 1.5 V F p F Forward voltage I = 70 mA, t = 20 ms V -1.5 - V F p F I = 0.7 A, t = 100 s V -3.0 - V F p F Temperature coefficient of V I = 20 mA TK --0.9- mV/K F F VF Reverse current I Not designed for reverse operation nA R 2 Junction capacitance V = 0 V, f = 1 MHz, E = 0 mW/cm C -30- pF R J I = 20 mA, t = 20 ms I 15 25 - mW/sr F p e Radiant intensity I = 70 mA, t = 20 ms I -90- mW/sr F p e I = 0.7 A, t = 100 s I -560 - mW/sr F p e 2 E = 1 mW/cm , = 950 nm, e Reverse light current I -0.5 - A ra V = 5 V R Radiant power I = 70 mA, t = 20 ms -40- mW F p e Temperature coefficient of I = 70 mA TK - -0.21 - %/K F e radiant power Angle of half intensity - 9- deg Peak wavelength I = 70 mA 920 940 960 nm F p Spectral bandwidth I = 70 mA -55- nm F Temperature coefficient of I = 70 mA TK -0.28- nm/K p F p Rise time I = 70 mA, 10 % to 90 % t -5 - ns F r Fall time I = 70 mA, 10 % to 90 % t -6 - ns F f Rev. 1.6, 22-Sep-17 Document Number: 84209 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F