VSMY1850ITX01 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology FEATURES Package type: surface mount Package form: 0805 Dimensions (L x W x H in mm): 2 x 1.25 x 0.85 AEC-Q101 qualified Enhanced operating temperature range: -40 C to +105 C Peak wavelength: = 850 nm p High reliability High radiant power High radiant intensity 22119 High speed Angle of half intensity: = 60 Suitable for high pulse current operation DESCRIPTION 0805 standard surface-mountable package TM As part of the SurfLight portfolio, the VSMY1850ITX01 is Floor life: 72 h, MSL 4, acc. J-STD-020 an infrared, 850 nm emitting diode based on GaAlAs surface Lead (Pb)-free reflow soldering emitter chip technology with high radiant intensity, high optical power and high speed, molded in clear, untinted Material categorization: for definitions of compliance 0805 plastic package for surface mounting (SMD). please see www.vishay.com/doc 99912 APPLICATIONS Miniature light barrier Photointerrupters Optical switch Emitter source for proximity sensors IR touch panels IR flash IR illumination Emitter for automotive applications (e.g. rain sensor) PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r VSMY1850ITX01 10 60 850 10 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY1850ITX01 Tape and reel MOQ: 3000 pcs, 3000 pcs/reel 0805 Note MOQ: minimum order quantity Rev. 1.0, 11-Sep-14 Document Number: 84272 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VSMY1850ITX01 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.1, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 190 mW V Junction temperature T 100 C j Operating temperature range T -40 to +105 C amb Storage temperature range T -40 to +110 C stg Soldering temperature acc. figure 7, J-STD-020 T 260 C sd Thermal resistance junction/ambient J-STD-051 R 270 K/W thJA 120 200 180 100 160 140 80 120 100 60 80 R = 270 K/W R = 270 K/W 40 thJA thJA 60 40 20 20 0 0 0 153045607590 105120 0 153045607590 105120 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.65 1.9 V F p F Forward voltage I = 1 A, t = 100 s V 2.9 V F p F I = 1 mA TK -1.4 mV/K F VF Temperature coefficient of V F I = 10 mA TK -1.18 mV/K F VF Reverse current I not designed for reverse operation A R V = 0 V, f = 1 MHz, R Junction capacitance C 125 pF J 2 E = 0 mW/cm I = 100 mA, t = 20 ms I 510 15 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I 85 mW/sr F p e Radiant power I = 100 mA, t = 20 ms e50 mW F p Temperature coefficient of radiant I = 100 mA TK -0.35 %/K F e power Angle of half intensity 60 deg Peak wavelength I = 100 mA 840 850 870 nm F p Spectral bandwidth I = 30 mA 30 nm F Temperature coefficient of I = 30 mA TK 0.25 nm p F p Rise time I = 100 mA, 20 % to 80 % t 10 ns F r Fall time I = 100 mA, 20 % to 80 % t 10 ns F f Virtual source diameter d 0.5 mm Rev. 1.0, 11-Sep-14 Document Number: 84272 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F
