VS-MBR4045CT-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A FEATURES Base 2 common 150 C T operation J cathode Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical Anode 2 Anode strength and moisture resistance 13Common 3L TO-220AB cathode Guard ring for enhanced ruggedness and long term reliability PRIMARY CHARACTERISTICS Designed and qualified according to JEDEC -JESD 47 I 2 x 20 A Material categorization: for definitions of compliance F(AV) please see www.vishay.com/doc 99912 V 45 V R V at I 0.58 V F F DESCRIPTION I max. 95 mA at 125 C RM This center tap Schottky rectifier has been optimized for low T max. 150 C J reverse leakage at high temperature. The proprietary barrier E 20 mJ technology allows for reliable operation up to 150 C AS junction temperature. Typical applications are in switching Package 3L TO-220AB power supplies, converters, freewheeling diodes, and reverse battery protection. Circuit configuration Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUESUNITS I Rectangular waveform (per device) 40 A F(AV) V 45 V RRM I T = 118 C (per leg) 40 FRM C A I t = 5 s sine 900 FSM p V 20 A , T = 125 C 0.58 V F pk J T Range -65 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-MBR4045CT-M3 UNITS Maximum DC reverse voltage V R 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS per leg 20 Maximum average forward I T = 118 C, rated V F(AV) C R current per device 40 Peak repetitive forward current per leg I Rated V , square wave, 20 kHz, T = 118 C 40 FRM R C A 5 s sine or 3 s rect. pulse 900 Following any rated Maximum peak one cycle non-repetitive I load condition and with FSM surge current per leg 10 ms sine or 6 ms rect. pulse rated V applied 210 RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 3 A, L = 4.40 mH 20 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 3A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 15-Aug-17 Document Number: 96258 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-MBR4045CT-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 20 A 0.60 T = 25 C J 40 A 0.78 (1) Maximum forward voltage drop V V FM 20 A 0.58 T = 125 C J 40 A 0.75 T = 25 C 1 J (1) Maximum instantaneus reverse current I T = 100 C Rated DC voltage 50 mA RM J T = 125 C 95 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 900 pF T R DC, Typical series inductance L Measured from top of terminal to mounting plane 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range T -65 to +150 J C Maximum storage temperature range T -65 to +175 Stg Maximum thermal resistance, R DC operation 1.5 thJC junction to case per leg Typical thermal resistance, Mounting surface, smooth and greased R 0.50 C/W thCS case to heatsink (Only for TO-220) Maximum thermal resistance, DC operation R 50 thJA 2 (For D PAK and TO-262) junction to ambient 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque Non-lubricated threads (lbf in) maximum 12 (10) Marking device Case style 3L TO-220AB MBR4045CT Revision: 15-Aug-17 Document Number: 96258 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000