VS-MBR4060WT-N3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A Base FEATURES common cathode 150 C T operation J 2 Very low forward voltage drop High frequency operation High purity, high temperature epoxy 1 encapsulation for enhanced mechanical 2 strength and moisture resistance 3 Guard ring for enhanced ruggedness and long term 13 Anode Anode reliability TO-247AC 3L 2 Common Designed and qualified according to JEDEC -JESD 47 cathode Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS DESCRIPTION I 2 x 20 A F(AV) The VS-MBR4060WT... center tap Schottky rectifier has V 60 V R been optimized for very low forward voltage drop, with V at I 0.62 V F F moderate leakage. The proprietary barrier technology allows I max. 100 mA at 125 C RM for reliable operation up to 150 C junction temperature. T max. 150 C J Typical applications are in switching power supplies, E 13 mJ AS converters, freewheeling diodes, and reverse battery Package TO-247AC 3L protection. Circuit configuration Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUESUNITS I Rectangular waveform 40 A F(AV) V 60 V RRM I t = 5 s sine 1020 A FSM p V 20 A , T = 125 C (per leg) 0.62 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-MBR4060WT-N3 UNITS Maximum DC reverse voltage V R 60 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS per leg 20 Maximum average I T = 108 C, 50 % duty cycle, rectangular waveform F(AV) C forward current per device 40 A 5 s sine or 3 s rect. pulse Following any rated 1020 Maximum peak one cycle I load condition and with FSM non-repetitive surge current per leg 10 ms sine or 6 ms rect. pulse 265 rated V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 1.5 A, L = 11.5 mH 13 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 1.5 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 03-Jan-18 Document Number: 96467 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-MBR4060WT-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS T = 25 C 0.72 J (1) Maximum forward voltage drop V 20 A V FM T = 125 C 0.62 J T = 25 C 1.0 J Maximum instantaneous reverse current I Rated DC voltage mA RM T = 125 C 100 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 720 pF T R DC, Typical series inductance L Measured from top of terminal to mounting plane 7.5 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to 150 C J Stg temperature range Maximum thermal resistance, R DC operation 2.20 thJC junction to case per package Typical thermal resistance, R Mounting surface, smooth and greased 1.10 C/W thCS case to heatsink Maximum thermal resistance, R DC operation 50 thJA junction to ambient 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Marking device Case style TO-247AC 3L MBR4060WT Revision: 03-Jan-18 Document Number: 96467 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000