VS-MBRS140TRPbF Vishay High Power Products Schottky Rectifier, 1.0 A FEATURES Small foot print, surface mountable Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Cathode Anode Meets MSL level 1, per J-STD-020, LF maximum peak of SMB 260 C Compliant to RoHS directive 2002/95/EC Designed and qualified for industrial level DESCRIPTION PRODUCT SUMMARY The VS-MBRS140TRPbF surface mount Schottky rectifier I 1.0 A F(AV) has been designed for applications requiring low forward V 40 V R drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 1.0 A F(AV) V 40 V RRM I t = 5 s sine 380 A FSM p V 1.0 Apk, T = 125 C 0.53 V F J T Range - 55 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-MBRS140TRPbF UNITS Maximum DC reverse voltage V R 40 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 119 C, rectangular waveform 1.0 F(AV) L Following any rated 5 s sine or 3 s rect. pulse 380 A Maximum peak one cycle I load condition and with FSM non-repetitive surge current 10 ms sine or 6 ms rect. pulse 40 rated V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1 A, L = 6 mH 3.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Document Number: 94319 For technical questions, contact: diodestech vishay.com www.vishay.com Revision: 05-Mar-10 1 VS-MBRS140TRPbF Schottky Rectifier, 1.0 A Vishay High Power Products ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP.MAX.UNITS 1 A 0.52 0.6 T = 25 C J 2 A 0.70 0.77 (1) Maximum forward voltage drop V V FM 1 A 0.48 0.53 T = 125 C J 2 A 0.63 0.71 T = 25 C -0.1 J (1) Maximum reverse leakage current I V = Rated V mA RM R R T = 125 C - 4.0 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C - 80 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body - 2.0 nH S Maximum voltage rate of change dV/dt Rated V - 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage (1) T , T - 55 to 150 C J Stg temperature range Maximum thermal resistance, DC operation (2) R 36 thJL junction to lead See fig. 4 C/W Maximum thermal resistance, R DC operation 80 thJA junction to ambient 0.10 g Approximate weight 0.003 oz. Marking device Case style SMB (similar to DO-214AA) V14 Notes dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA (2) Mounted 1 square PCB www.vishay.com For technical questions, contact: diodestech vishay.com Document Number: 94319 2 Revision: 05-Mar-10