VS-MBR20...CTHN3 Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 10 A FEATURES Base 2 common 150 C T operation J cathode Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical Anode 2 Anode Common 13 strength and moisture resistance TO-220AB cathode Guard ring for enhanced ruggedness and long term reliability PRODUCT SUMMARY AEC-Q101 qualified meets JESD 201 class 2 whisker test I 2 x 10 A F(AV) Material categorization: For definitions of compliance V 35 V, 45 V R please see www.vishay.com/doc 99912 V at I 0.57 V F F DESCRIPTION I max. 15 mA at 125 C RM This center tap Schottky rectifier has been optimized for low T max. 150 C J reverse leakage at high temperature. The proprietary barrier E 8 mJ AS technology allows for reliable operation up to 150 C Package TO-220AB junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and Diode variation Common cathode reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform (per device) 20 A F(AV) V 35/45 V RRM I T = 135 C (per leg) 20 FRM C A I t = 5 s sine 1060 FSM p V 10 A , T = 125 C 0.57 V F pk J T Range -65 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-MBR2035CTHN3VS-MBR2045CTHN3UNITS Maximum DC reverse voltage V R 35 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS per leg 10 Maximum average I T = 135 C, rated V F(AV) C R forward current per device 20 Peak repetitive forward current per leg I Rated V , square wave, 20 kHz, T = 135 C 20 FRM R C Following any rated load 5 s sine or 3 s rect. pulse condition and with rated V 1060 RRM A applied Non-repetitive peak surge current I FSM Surge applied at rated load condition half wave, 150 single phase, 60 Hz Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 2 AR Frequency limited by T maximum V = 1.5 x V typical J A R Non-repetitive avalanche energy per leg E T = 25 C, I = 2 A, L = 4 mH 8 mJ AS J AS Revision: 05-Mar-14 Document Number: 94960 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-MBR20...CTHN3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 20 A T = 25 C 0.84 J (1) Maximum forward voltage drop V 10 A 0.57 V FM T = 125 C J 20 A 0.72 T = 25 C 0.1 J (1) Maximum instantaneous reverse current I Rated DC voltage mA RM T = 125 C 15 J Threshold voltage V 0.354 V F(TO) T = T maximum J J Forward slope resistance r 17.6 m t Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 600 pF T R DC Typical series inductance L Measured from top of terminal to mounting plane 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range T -65 to 150 J C Maximum storage temperature range T -65 to 175 Stg Maximum thermal resistance, R DC operation 2.0 thJC junction to case per leg C/W Mounting surface, smooth and greased Typical thermal resistance, R 0.50 thCS (only for TO-220) case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque Non-lubricated threads (lbf in) maximum 12 (10) MBR2035CTH Marking device Case style TO-220AB MBR2045CTH Revision: 05-Mar-14 Document Number: 94960 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000