VS-MBRB4045CTPbF, VS-MBR4045CT-1PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A 2 FEATURES TO-263AB (D PAK) TO-262AA 150 C T operation J Low forward voltage drop High frequency operation 2 Center tap TO-220, D PAK and TO-262 Base Base packages common common High purity, high temperature epoxy cathode cathode 2 2 encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability 2 2 Meets MSL level 1, per J-STD-020, LF maximum peak 1 1 Common 3 3 Common of 260 C Anode cathode Anode Anode cathode Anode AEC-Q101 qualified VS-MBRB4045CTPbF VS-MBR4045CT-1PbF Material categorization: for definitions of compliance PRODUCT SUMMARY please see www.vishay.com/doc 99912 2 Package TO-263AB (D PAK), TO-262AA DESCRIPTION I 40 A F(AV) V 45 V The center tap Schottky rectifier has been optimized for low R reverse leakage at high temperature. The proprietary barrier V at I 0.58 V F F technology allows for reliable operation up to 150 C I max. 95 mA at 125 C RM junction temperature. Typical applications are in switching T max. 150 C J power supplies, converters, freewheeling diodes, and Diode variation Common cathode reverse battery protection. E 20 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform (per device) 40 F(AV) A I T = 118 C (per leg) 40 FRM C V 45 V RRM I t = 5 s sine 900 A FSM p V 20 A , T = 125 C 0.58 V F pk J T Range -65 to +150 C J VOLTAGE RATINGS VS-MBRB4045CTPbF PARAMETER SYMBOL UNITS VS-MBR4045CT-1PbF Maximum DC reverse voltage V R 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS per leg 20 Maximum average I T = 118 C, rated V F(AV) C R forward current per device 40 Peak repetitive forward current per leg I Rated V , square wave, 20 kHz, T = 118 C 40 FRM R C A 5 s sine or 3 s rect. pulse Following any rated load 900 Maximum peak one cycle non-repetitive I condition and with rated FSM peak surge current per leg 10 ms sine or 6 ms rect. pulse 210 V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 3 A, L = 4.4 mH 20 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 3A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 15-Jul-14 Document Number: 94311 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-MBRB4045CTPbF, VS-MBR4045CT-1PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 20 A 0.60 T = 25 C J 40 A 0.78 (1) Maximum forward voltage drop V V FM 20 A 0.58 T = 125 C J 40 A 0.75 T = 25 C 1 J Maximum instantaneous (1) I T = 100 C Rated DC voltage 50 mA RM J reverse current T = 125 C 95 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 900 pF T R DC Typical series inductance L Measured from top of terminal to mounting plane 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range T -65 to +150 J C Maximum storage temperature range T -65 to +175 Stg Maximum thermal resistance, R DC operation 1.5 thJC junction to case per leg Typical thermal resistance, Mounting surface, smooth and greased R 0.50 C/W thCS case to heatsink (Only for TO-220) Maximum thermal resistance, DC operation R 50 thJA 2 (For D PAK and TO-262) junction to ambient 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque Non-lubricated threads (lbf in) maximum 12 (10) 2 Case style D PAK MBRB4045CT Marking device Case style TO-262 MBR4045CT-1 Revision: 15-Jul-14 Document Number: 94311 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000