VS-MBRD320-M3, VS-MBRD330-M3, VS-MBRD340-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 3.0 A FEATURES Base cathode Low forward voltage drop 4, 2 Guard ring for enhanced ruggedness and long term reliability Popular D-PAK outline 1 3 Small foot print, surface mountable Anode Anode D-PAK (TO-252AA) High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Material categorization: for definitions of compliance PRODUCT SUMMARY please see www.vishay.com/doc 99912 Package D-PAK (TO-252AA) I 3.0 A F(AV) V 20 V, 30 V, 40 V R DESCRIPTION V at I 0.49 V F F The VS-MBRD320-M3, VS-MBRD330-M3, VS-MBRD340-M3 I 20 mA at 125 C surface mount Schottky rectifier has been designed for RM applications requiring low forward drop and small foot prints T max. 150 C J on PC boards. Typical applications are in disk drives, Diode variation Single die switching power supplies, converters, freewheeling diodes, E 8 mJ AS battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 3.0 A F(AV) V 20 to 40 V RRM I t = 5 s sine 490 A FSM p V 3 A , T = 125 C 0.49 V F pk J T -40 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-MBRD320-M3 VS-MBRD330-M3 VS-MBRD340-M3 UNITS Maximum DC reverse voltage V R 20 30 40 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 133 C, rectangular waveform 3.0 F(AV) L Following any rated load 5 s sine or 3 s rect. pulse 490 A Maximum peak one cycle I condition and with rated FSM non-repetitive surge current 10 ms sine or 6 ms rect. pulse 75 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1 A, L = 16 mH 8.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 22-Nov-16 Document Number: 93323 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-MBRD320-M3, VS-MBRD330-M3, VS-MBRD340-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS 3 A 0.48 0.6 T = 25 C J 6 A 0.58 0.7 Maximum forward voltage drop (1) V V FM See fig. 1 3 A 0.41 0.49 T = 125 C J 6 A 0.55 0.625 T = 25 C 0.02 0.2 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 10.7 20 J Typical junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 189 - pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 5.0 - nH S Maximum voltage rate of change dV/dt Rated V - 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS (1) Maximum junction temperature range T -40 to +150 J C Maximum storage temperature range T -40 to +175 Stg Maximum thermal resistance, DC operation R 6.0 thJC junction to case See fig. 4 C/W Maximum thermal resistance, R 80 thJA junction to ambient 0.3 g Approximate weight 0.01 oz. MBRD320 Marking device Case style D-PAK (similar to TO-252AA) MBRD330 MBRD340 Note dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA Revision: 22-Nov-16 Document Number: 93323 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000