VS-MBRD650CT-M3, VS-MBRD660CT-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 3 A FEATURES Base common Low forward voltage drop cathode 4 Guard ring for enhanced ruggedness and long term reliability Popular D-PAK outline Center tap configuration 2 Small foot print, surface mountable Common cathode D-PAK (TO-252AA) High frequency operation 13 Meets MSL level 1, per J-STD-020, LF maximum peak of Anode Anode 260 C Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRODUCT SUMMARY Package D-PAK (TO-252AA) DESCRIPTION I 2 x 3 A F(AV) The VS-MBRD650CT-M3, VS-MBRD660CT-M3 surface V 50 V, 60 V mount, center tap, Schottky rectifier series has been R designed for applications requiring low forward drop and V at I 0.65 V F F small foot prints on PC boards. Typical applications are in I 15 mA at 125 C RM disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery T max. 150 C J protection. Diode variation Common cathode E 6 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 6 A F(AV) V 50/60 V RRM I t = 5 s sine 490 A FSM p V 3 A , T = 125 C (per leg) 0.65 V F pk J T Range -40 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-MBRD650CT-M3 VS-MBRD660CT-M3 UNITS Maximum DC reverse voltage V R 50 60 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average per leg 3.0 forward current I 50 % duty cycle at T = 128 C, rectangular waveform F(AV) C per device 6 See fig. 5 A Maximum peak one cycle Following any rated load 5 s sine or 3 s rect. pulse 490 non-repetitive surge current I condition and with rated FSM 10 ms sine or 6 ms rect. pulse 75 See fig. 7 V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 1 A, L = 12 mH 6 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 0.6 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 24-Nov-16 Document Number: 93325 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-MBRD650CT-M3, VS-MBRD660CT-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 3 A 0.7 T = 25 C J 6 A 0.9 Maximum forward voltage drop per leg (1) V V FM See fig. 1 3 A 0.65 T = 125 C J 6 A 0.85 T = 25 C 0.1 Maximum reverse leakage current per leg J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 15 J Typical junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 145 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 5.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage (1) T , T - 40 to +150 C J Stg temperature range per leg 6 Maximum thermal resistance, DC operation R thJC junction to case See fig. 4 per device 3 C/W Maximum thermal resistance, R 80 thJA junction to ambient 0.3 g Approximate weight 0.01 oz. MBRD650CT Marking device Case style D-PAK (similar to TO-252AA) MBRD660CT Note dP 1 tot (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA Revision: 24-Nov-16 Document Number: 93325 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000