X-On Electronics has gained recognition as a prominent supplier of VS-8TQ100STRL-M3 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. VS-8TQ100STRL-M3 Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

VS-8TQ100STRL-M3 Vishay

VS-8TQ100STRL-M3 electronic component of Vishay
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Part No.VS-8TQ100STRL-M3
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers Schottky - D2PAK-e3
Datasheet: VS-8TQ100STRL-M3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8000: USD 0.578 ea
Line Total: USD 4624 
Availability - 0
MOQ: 8000  Multiples: 800
Pack Size: 800
Availability Price Quantity
3344
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.705
10 : USD 1.166
100 : USD 0.8239
500 : USD 0.8228
800 : USD 0.6468

   
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We are delighted to provide the VS-8TQ100STRL-M3 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-8TQ100STRL-M3 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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VS-8TQ080S-M3, VS-8TQ100S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 8 A FEATURES Base 175 C T operation J cathode 2 Low forward voltage drop High frequency operation High purity, high temperature epoxy 2 encapsulation for enhanced mechanical 1 strength and moisture resistance 1 3 3 Guard ring for enhanced ruggedness and long term N/C Anode 2 D PAK (TO-263AB) reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C PRIMARY CHARACTERISTICS Designed and qualified according to JEDEC -JESD 47 I 8 A F(AV) Material categorization: for definitions of compliance V 80 V, 100 V R please see www.vishay.com/doc 99912 V at I 0.58 V F F I 7 mA at 125 C RM DESCRIPTION T max. 175 C J The VS-8TQ... Schottky rectifier series has been optimized E 7.5 mJ AS for low reverse leakage at high temperature. The proprietary 2 Package D PAK (TO-263AB) barrier technology allows for reliable operation up to 175 C junction temperature. Typical applications are in switching Circuit configuration Single power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 8 A F(AV) V Range 80/100 V RRM I t = 5 s sine 850 A FSM p V 8 A , T = 125 C 0.58 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-8TQ080S-M3VS-8TQ100S-M3UNITS Maximum DC reverse voltage V R 80 100 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 157 C, rectangular waveform 8 A F(AV) C See fig. 5 Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated load 850 non-repetitive surge current I condition and with rated A FSM 10 ms sine or 6 ms rect. pulse 230 See fig. 7 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 0.50 A, L = 60 mH 7.50 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 0.50 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 02-Nov-17 Document Number: 94946 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-8TQ080S-M3, VS-8TQ100S-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 8 A 0.72 T = 25 C J Maximum forward voltage drop 16 A 0.88 (1) V V FM See fig. 1 8 A 0.58 T = 125 C J 16 A 0.69 T = 25 C 0.55 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 7 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 500 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and T , T -55 to +175 C J Stg storage temperature range Maximum thermal resistance, DC operation R 2.0 thJC junction to case See fig. 4 C/W Typical thermal resistance, R Mounting surface, smooth, and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 8TQ080S 2 Marking device Case style D PAK (TO-263AB) 8TQ100S T = 175 C J T = 150 C J T = 125 C J T = 175 C J T = 100 C J T = 125 C J T = 25 C J T = 75 C J T = 50 C J T = 25 C J 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 20 40 60 80 100 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R FM Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 02-Nov-17 Document Number: 94946 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 1000 100 10 100 1 10 0.1 0.01 1 0.001 0.1 0.0001 I - Instantaneous F Forward Current (A) I - Reverse Current (mA) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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