VS-80APF1.-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 80 A Base FEATURES cathode Glass passivated pellet chip junction 2 150 C max. operating junction temperature Low forward voltage drop and short reverse 1 recovery time 2 Available Designed and qualified according to 3 JEDEC -JESD 47 13 TO-247AC 3L Material categorization: for definitions of compliance Anode Anode please see www.vishay.com/doc 99912 APPLICATIONS PRIMARY CHARACTERISTICS These devices are intended for use in output rectification I 80 A F(AV) and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on V 1000 V, 1200 V R conducted EMI should be met. V at I 1.35 V F F I 1250 A FSM DESCRIPTION t 90 ns rr The VS-80APF12L-M3 soft recovery rectifier series has T max. 150 C been optimized for combined short reverse recovery tim e J and low forward voltage drop. Package TO-247AC 3L The glass passivation ensures stable reliable operation in Circuit configuration Single the most severe temperature and power cycling conditions. Snap factor 0.5 MAJOR RATINGS AND CHARACTERISTICS SYMBOL TEST CONDITIONS VALUES UNITS V 1000/1200 V RRM I Sinusoidal waveform 80 F(AV) A I 1250 FSM t 1 A, - 100 A/s 90 ns rr V 40 A, T = 25 C 1.2 V F J T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-80APF10-M3 1000 1100 15 VS-80APF12-M3 1200 1300 Revision: 24-Jan-2020 Document Number: 93725 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-80APF1.-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 92 C, 180 conduction half sine wave 80 F(AV) C 10 ms sine pulse, rated V applied 1100 A RRM Maximum peak one cycle I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 1250 10 ms sine pulse, rated V applied 5000 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 7000 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 70 000 A s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 80 A, T = 25 C 1.35 V FM J Forward slope resistance r 4.03 m t T = 150 C J Threshold voltage V 0.87 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 15 J RECOVERY CHARACTERISTICS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS I Reverse recovery time t 480 ns FM rr t I at 80 A F pk rr Reverse recovery current I 25 A/s 7.1 A rr t 25 C dir Reverse recovery charge Q 2.1 C rr dt Q rr Snap factor S 0.5 I RM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage , T -40 to +150 C T J Stg temperature range Maximum thermal resistance, R DC operation 0.35 thJC junction to case Maximum thermal resistance, R 40 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth, and greased 0.2 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 80APF10 Marking device Case style TO-247AC 3L 80APF12 Revision: 24-Jan-2020 Document Number: 93725 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000