VS-80APS..-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A Base FEATURES cathode Very low forward voltage drop 2 150 C max. operating junction temperature Glass passivated pellet chip junction 1 Designed and qualified according to 2 Available JEDEC -JESD 47 3 Material categorization: for definitions of compliance 13 TO-247AC 3L please see www.vishay.com/doc 99912 Anode Anode APPLICATIONS PRIMARY CHARACTERISTICS Input rectification I 80 A Vishay Semiconductors switches and output rectifiers F(AV) which are available in identical package outlines V 800 V to 1200 V R V at I 1.17 V F F DESCRIPTION IFSM 1500 A High voltage rectifiers optimized for very low forward T max. 150 C J voltage drop with moderate leakage. Package TO-247AC 3L These devices are intended for use in main rectification (single or three phase bridge). Circuit configuration Single MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 80 A F(AV) V Range 800/1200 V RRM I 1500 A FSM V 80 A, T = 25 C 1.17 V F J T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-80APS08-M3 800 900 1.5 VS-80APS12-M3 1200 1300 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I T = 100 C, 180 conduction half sine wave 80 F(AV) C 10 ms sine pulse, rated V applied 1450 A RRM Maximum peak one cycle I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 1500 10 ms sine pulse, rated V applied 10 500 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 14 000 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 140 000 A s Revision: 27-Feb-2019 Document Number: 93794 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-80APS..-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUES UNITS Maximum forward voltage drop V 80 A, T = 25 C 1.17 V FM J Forward slope resistance r 3.17 m t T = 150 C J Threshold voltage V 0.73 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 1.5 J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -40 to 150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.35 thJC junction to case Maximum thermal resistance, R 40 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, flat, smooth and greased 0.2 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 80APS08 Marking device Case style TO-247AC 3L 80APS12 VS-80APS.. Series VS-80APS.. Series R (DC) = 0.35 K/W R (DC) = 0.35 K/W thJC thJC Conduction angle Conduction period 30 60 30 90 60 120 90 180 120 DC 180 0 10 20 30 40 50 60 70 80 90 0 20 40 60 80 100 120 140 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Revision: 27-Feb-2019 Document Number: 93794 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 150 150 140 140 130 130 120 120 110 110 100 90 100 80 90 Maximum Allowable Case Temperture (C) Maximum Allowable Case Temperature (C)