VS-80CPQ020-N3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 40 A Base FEATURES common cathode 150 C T operation J 2 Optimized for 3.3 V application Ultralow forward voltage drop High frequency operation 1 Guard ring for enhanced ruggedness and long 2 term reliability 3 13 High purity, high temperature epoxy encapsulation for Anode Anode enhanced mechanical strength and moisture resistance TO-247AC 3L 2 Common Designed and qualified according to JEDEC -JESD 47 cathode Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS I 2 x 40 A F(AV) DESCRIPTION V 20 V R This center tap Schottky rectifier has been optimized for V at I 0.36 V F F ultralow forward voltage drop specifically for 3.3 V output I max. 1100 mA at 125 C RM power supplies. The proprietary barrier technology allows T max. 150 C for reliable operation up to 150 C junction temperature. J Typical applications are in parallel switching power supplies, E 27 mJ AS converters, reverse battery protection, and redundant Package TO-247AC 3L power subsystems. Circuit configuration Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 80 A F(AV) V 20 V RRM I t = 5 s sine 2200 A FSM p V 40 A , T = 150 C (per leg) 0.32 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-80CPQ020-N3 UNITS Maximum DC reverse voltage V R 20 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS per leg 40 Maximum average 50 % duty cycle at T = 138 C, rectangular waveform I F(AV) C forward current per device 80 A 5 s sine or 3 s rect. pulse Following any rated 2200 Maximum peak one cycle I load condition and with FSM non-repetitive surge current per leg 10 ms sine or 6 ms rect. pulse rated V applied 500 RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 6 A, L = 1.5 mH 27 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 6A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 03-Jan-18 Document Number: 96464 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-80CPQ020-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 40 A 0.46 T = 25 C J 80 A 0.55 40 A 0.36 Maximum forward (1) V T = 125 C V FM J voltage drop per leg 80 A 0.46 40 A 0.32 T = 150 C J 80 A 0.43 T = 125 C V = 5 V 110 J R T = 150 C V = 10 V 600 J R Maximum reverse (1) I mA RM leakage current per leg T = 25 C 5.5 J V = Rated V R R T = 125 C 1100 J Threshold voltage V T = T maximum 0.185 V F(TO) J J Maximum junction capacitance per C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 6500 pF T R DC leg Typical series inductance per leg L Measured lead to lead 5 mm from package body 7.5 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to 150 C J Stg temperature range Maximum thermal resistance, 0.6 junction to case per leg R DC operation thJC Maximum thermal resistance, 0.3 C/W junction to case per package Typical thermal resistance, R Mounting surface, smooth and greased 0.25 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Marking device Case style TO-247AC 3L 80CPQ020 Revision: 03-Jan-18 Document Number: 96464 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000