VS-72CPQ030PbF, VS-72CPQ030-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 2 x 35 A FEATURES Base common 150 C T operation J cathode 2 Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long 13 term reliability TO-247AC Anode Anode 2 1 2 Compliant to RoHS Directive 2002/95/EC Common cathode Designed and qualified according to JEDEC-JESD47 Halogen-free according to IEC 61249-2-21 definition PRODUCT SUMMARY (-N3 only) Package TO-247AC DESCRIPTION I 2 x 35 A F(AV) The VS-72CPQ030... center tap Schottky rectifier series has V 30 V R been optimized for low reverse leakage at high temperature. V at I 0.43 V F F The proprietary barrier technology allows for reliable I max. 450 mA at 125 C RM operation up to 150 C junction temperature. Typical applications are in switching power supplies, converters, T max. 150 C J freewheeling diodes, and reverse battery protection. Diode variation Common cathode E 27 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 70 A F(AV) V 30 V RRM I t = 5 s sine 2180 A FSM p V 35 Apk, T = 125 C (per leg) 0.43 V F J T Range - 55 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-72CPQ030PbFVS-72CPQ030-N3UNITS Maximum DC reverse voltage V R 30 30 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average per leg 35 forward current I 50 % duty cycle at T = 125 C, rectangular waveform F(AV) C per device 70 See fig. 5 A Maximum peak one cycle non-repetitive 5 s sine or 3 s rect. pulse Following any rated load 2180 surge current per leg I condition and with rated FSM V applied 10 ms sine or 6 ms rect. pulse 600 See fig. 7 RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 6 A, L = 1.5 mH 27 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 6A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 31-Aug-11 Document Number: 94254 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-72CPQ030PbF, VS-72CPQ030-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 35 A 0.51 T = 25 C J 70 A 0.61 Maximum forward voltage drop per leg (1) V V FM See fig. 1 35 A 0.43 T = 125 C J 70 A 0.58 T = 25 C 1.9 Maximum reverse leakage current per leg J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 450 J Threshold voltage V 0.25 V F(TO) T = T maximum J J Forward slope resistance r 4.7 m t Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 4600 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 7.5 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T - 55 to 150 C J Stg temperature range Maximum thermal resistance, DC operation 0.8 junction to case per leg See fig. 4 R thJC Maximum thermal resistance, DC operation 0.4 C/W junction to case per package Typical thermal resistance, R Mounting surface, smooth and greased 0.25 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Marking device Case style TO-247AC (JEDEC) 72CPQ030 Revision: 31-Aug-11 Document Number: 94254 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000