VS-80CPU02-F3, VS-80CPU02-N3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 x 40 A FRED Pt FEATURES Base common Ultrafast recovery time cathode 2 Low forward voltage drop Low leakage current 175 C operating junction temperature Designed and qualified according to JEDEC -JESD 47 Material categorization: Available 13 for definitions of compliance please see Anode Anode TO-247AC 2 1 2 www.vishay.com/doc 99912 Common cathode DESCRIPTIONS / APPLICATIONS VS-80CPU02... series are the state of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop and ultrafast recovery time. PRODUCT SUMMARY The planar structure and the platinum doped life time control Package TO-247AC guarantee the best overall performance, ruggedness and reliability characteristics. I 2 x 40 A F(AV) These devices are intended for use in the output rectification V 200 V R stage of welding, SMPS, UPS, DC/DC converters as well as V at I 0.8 V F F freewheeling diodes in low voltage inverters and chopper t typ. 34 ns rr motor drives. T max. 175 C J Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over Diode variation Common cathode dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Repetitive peak reverse voltage V 200 V RRM per leg 40 Average rectified forward current I T = 145 C F(AV) C total device 80 A Non-repetitive peak surge current per leg I T = 25 C 330 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 200 - - R blocking voltage V R I = 40 A - 0.94 1.02 F V I = 40 A, T = 150 C - 0.80 0.90 F J Forward voltage V F I = 80 A - 1.07 1.20 F I = 80 A, T = 150 C - 0.97 1.08 F J V = V rated - - 5 R R Reverse leakage current I A R T = 150 C, V = V rated - - 500 J R R Junction capacitance C V = 200 V - 120 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 3.5 - nH S Revision: 27-Mar-17 Document Number: 93457 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-80CPU02-F3, VS-80CPU02-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 34 - F F R Reverse recovery time t T = 25 C -33- ns rr J T = 125 C - 54 - J I = 40 A F T = 25 C - 3.4 - J Peak recovery current I dI /dt = - 200 A/s A RRM F T = 125 C - 8 - J V = 200 V R T = 25 C - 56 - J Reverse recovery charge Q nC rr T = 125 C - 216 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -0.460.70 thJC junction to case per leg Thermal resistance, R Typical socket mount - - 40 C/W thJA junction to ambient per leg Thermal resistance, R Mounting surface, flat, smooth and greased - 0.3 - thCS case to heatsink -6.0 - g Weight -0.21 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style TO-247AC 80CPU02 Revision: 27-Mar-17 Document Number: 93457 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000