VS-85HF(R)40M8 www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Stud Version), 85 A FEATURES High surge current capability Stud cathode and stud anode version Leaded version available Types up to 400 V V RRM Designed and qualified for industrial level Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 DO-203AB (DO-5) TYPICAL APPLICATIONS Battery chargers Converters PRODUCT SUMMARY Power supplies I 85 A F(AV) Machine tool controls Package DO-203AB (DO-5) Welding Circuit configuration Single diode MAJOR RATINGS AND CHARACTERISTICS 85HF(R) PARAMETER TEST CONDITIONS UNITS 400 85 A I F(AV) T 140 C C I 133 A F(RMS) 50 Hz 1700 I A FSM 60 Hz 1800 50 Hz 14 500 2 2 I t A s 60 Hz 13 500 V Range 400 V RRM T -65 to 180 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I MAXIMUM RRM RSM RRM VOLTAGE TYPE NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T = T MAXIMUM J J CODE V V mA VS-85HF(R) 40 400 500 9 Revision: 12-Feb-14 Document Number: 93529 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-85HF(R)40M8 www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS 85HF(R) UNITS 85 A Maximum average forward current I 180 conduction, half sine wave F(AV) at case temperature 140 C Maximum RMS forward current I 133 A F(RMS) t = 10 ms 1700 No voltage reapplied t = 8.3 ms 1800 Maximum peak, one-cycle forward, non-repetitive I A FSM surge current t = 10 ms 1450 100 % V RRM reapplied t = 8.3 ms 1500 Sinusoidal half wave, initial T = T maximum J J t = 10 ms 14 500 No voltage reapplied t = 8.3 ms 13 500 2 2 2 Maximum I t for fusing I t A s t = 10 ms 10 500 100 % V RRM reapplied t = 8.3 ms 9400 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 16 000 A s Value of threshold voltage 0.68 (up to 1200 V) V T = T maximum V F(TO) J J Value of threshold voltage 0.69 (for 1400 V, 1600 V) Value of forward slope resistance 1.62 (up to 1200 V) r T = T maximum mW f J J Value of forward slope resistance 1.75 (for 1400 V, 1600 V) Maximum forward voltage drop V I = 267 A, T = 25 C, t = 400 s rectangular wave 1.2 V FM pk J p THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 85HF(R) UNITS Maximum junction operating and T , T -65 to 180 C J Stg storage temperature range Maximum thermal resistance, junction to case R DC operation 0.35 thJC K/W Maximum thermal resistance, case to heatsink R Mounting surface, smooth, flat and greased 0.25 thCS Not lubricated thread, tighting on nut 3.4 (30) Lubricated thread, tighting on nut 2.3 (20) N m Maximum allowable mounting torque + 0 %, - 10 % (lbf in) Not lubricated thread, tighting on hexagon 4.2 (37) Lubricated thread, tighting on hexagon 3.2 (28) 17 g Approximate weight Unleaded device 0.6 oz. Case style See dimensions - link at the end of datasheet DO-203AB (DO-5) R CONDUCTION thJC CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS 180 0.10 0.08 120 0.11 0.11 90 0.13 0.13 T = T maximum K/W J J 60 0.17 0.17 30 0.26 0.26 Note The table above shows the increment of thermal resistance R when devices operate at different conduction angles than DC thJC Revision: 12-Feb-14 Document Number: 93529 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000