333 3 VS-8CSH01-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 4 A FRED Pt FEATURES eSMP Series Hyperfast recovery time, reduced Q , and soft rr recovery K 175 C maximum operating junction temperature K Anode 1 Specified for output and snubber operation Low forward voltage drop Cathode Anode 2 1 Low leakage current Meets MSL level 1, per J-STD-020, LF maximum peak 2 of 260 C SMPC (TO-277A) Meets JESD 201 class 2 whisker test Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 LINKS TO ADDITIONAL RESOURCES DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers specifically 3D Models designed with optimized performance of forward voltage drop and hyperfast recovery time. PRIMARY CHARACTERISTICS The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and I 2 x 4 A F(AV) reliability characteristics. V 100 V R These devices are intended for use in snubber, boost, a s V at I 0.72 V F F high frequency rectifiers and freewheeling diodes. t (typ.) 25 ns rr The extremely optimized stored charge and low recovery T max. 175 C J current minimize the switching losses and reduce power Package SMPC (TO-277A) dissipation in the switching element. Circuit configuration Common cathode MECHANICAL DATA Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 100 V RRM per device 8 Average rectified forward current I T = 160 C F(AV) Sp per diode 4 A per device 130 Non-repetitive peak surge current I T = 25 C FSM J per diode 70 Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 100 - - BR R R I = 4 A - 0.89 0.95 V F Forward voltage, per diode V F I = 4 A, T = 150 C - 0.72 0.78 F J V = V rated - - 2 R R Reverse leakage current, per diode I A R T = 150 C, V = V rated - 4 80 J R R Junction capacitance C V = 100 V - 18 - pF T R Revision: 13-Jan-2021 Document Number: 95704 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-8CSH01-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - 25 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 25 F R rr Reverse recovery time t ns rr T = 25 C -18- J T = 125 C - 27 - J I = 4 A F T = 25 C - 2 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 3.6 - J V = 160 V R T = 25 C - 18 - J Reverse recovery charge Q nC rr T = 125 C - 50 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and T , T -55 - 175 C J Stg storage temperature range Thermal resistance, junction R -2.5 3.5 C/W thJM to mount, per leg Thermal resistance, junction R -80- C/W thJA to ambient, per leg 0.1 g Approximate weight 0.0035 oz. Marking device Case style SMPC (TO-277A) QCH1 100 100 175 C 10 150 C T = 175 C J 1 10 T = 150 C J 125 C 0.1 T = 125 C J T = 25 C J 0.01 1 T = -40 C 25 C J 0.001 0.1 0.0001 0.20.4 0.60.8 1.01.2 1.41.6 0 255075 100 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 13-Jan-2021 Document Number: 95704 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R