VS-8CWH02FNHM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 4 A FRED Pt FEATURES Base Hyperfast recovery time common cathode 175 C max. operating junction temperature 2 Output rectification freewheeling Low forward voltage drop reduced Q and 2 rr 3 soft recovery 2 1 3 Low leakage current 1 Common Anode Anode DPAK (TO-252AA) AEC-Q101 qualified cathode Meets JESD 201 class 1A whisker test Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS I 2 x 4 A F(AV) DESCRIPTION / APPLICATIONS V 200 V R State of the art hyperfast recovery rectifiers designed with V at I 0.95 V F F optimized performance of forward voltage drop, hyperfast t (typ.) 23 ns rr recovery time, and soft recovery. T max. 175 C J The planar structure and the platinum doped life tim e Package DPAK (TO-252AA) control guarantee the best overall performance, ruggedness Circuit configuration Common cathode and reliability characteristics. These devices are intended for use in PFC boost stage in th e AC/DC section of SMPS inverters or as freewheeling diodes . Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V 200 V RRM Average rectified forward current I T = 164 C 8 F(AV) C A Non-repetitive peak surge current per leg I T = 25 C 80 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 200 - - R blocking voltage V R I = 4 A - 0.87 0.95 F V I = 8 A - 0.95 1.10 F Forward voltage per leg V F I = 4 A, T = 150 C - 0.71 0.80 F J I = 8 A, T = 150 C - 0.8 1.0 F J V = V rated - - 4 R R Reverse leakage current per leg I T = 125 C, V = V rated - - 40 A R J R R T = 150 C, V = V rated - - 80 J R R Junction capacitance per leg C V = 200 V - 17 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 19-Feb-2021 Document Number: 94741 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-8CWH02FNHM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 23 27 F F R Reverse recovery time t T = 25 C -20- ns rr J T = 125 C - 27 - J I = 4 A F T = 25 C - 2 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 3.4 - J V = 160 V R T = 25 C - 20 - J Reverse recovery charge Q nC rr T = 125 C - 46 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature T , T -65 - 175 C J Stg range Thermal resistance, per leg -2.7 3.2 R C/W thJC junction to case per device - 1.35 1.6 0.3 g Approximate weight 0.01 oz. Marking device Case style DPAK (TO-252AA) 8CWH02FNH Revision: 19-Feb-2021 Document Number: 94741 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000