VS-8CWH02FN-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 4 AFRED Pt FEATURES Base Hyperfast recovery time common cathode 175 C max. operating junction temperature 2 Output rectification freewheeling Low forward voltage drop reduced Q and rr soft recovery 2 1 3 Low leakage current Common DPAK (TO-252AA) Anode Anode cathode Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS DESCRIPTION / APPLICATIONS I 2 x 4 A F(AV) State of the art hyperfast recovery rectifiers designed with V 200 V R optimized performance of forward voltage drop, hyperfast V at I 0.71 V recovery time, and soft recovery. F F The planar structure and the platinum doped life tim e t (typ.) 23 ns rr control guarantee the best overall performance, ruggedness T max. 175 C J and reliability characteristics. Package DPAK (TO-252AA) These devices are intended for use in PFC boost stage in th e AC/DC section of SMPS inverters or as freewheeling diodes . Circuit configuration Common cathode Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V 200 V RRM Average rectified forward current I T = 164 C 8 F(AV) C A Non-repetitive peak surge current per leg I T = 25 C 80 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 200 - - R blocking voltage V R I = 4 A - 0.87 0.95 F V I = 8 A - 0.95 1.10 F Forward voltage per leg V F I = 4 A, T = 150 C - 0.71 0.80 F J I = 8 A, T = 150 C - 0.8 1.0 F J V = V rated - - 4 R R Reverse leakage current per leg I T = 125 C, V = V rated - - 40 A R J R R T = 150 C, V = V rated - - 80 J R R Junction capacitance per leg C V = 200 V - 17 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 11-Apr-18 Document Number: 93261 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-8CWH02FN-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 23 27 F F R Reverse recovery time t T = 25 C -20- ns rr J T = 125 C - 27 - J I = 4 A T = 25 C F - 2 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 3.4 - J V = 160 V R T = 25 C - 20 - J Reverse recovery charge Q nC rr T = 125 C - 46 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range per leg -2.7 3.2 Thermal resistance, R C/W thJC junction to case per device - 1.35 1.6 0.3 g Approximate weight 0.01 oz. Marking device Case style DPAK (TO-252AA) 8CWH02FN 100 100 T = 175 C J 10 T = 150 C J T = 125 C T = 175 C J 10 J 1 T = 100 C J 0.1 T = 75 C J 1 T = 125 C 0.01 J T = 50 C J 0.001 T = 25 C T = 25 C J J 0.1 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 100 150 200 V - Forward Voltage Drop (V) V - Reverse Voltage (V) FM R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 11-Apr-18 Document Number: 93261 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R