VS-8E2TX06-E, VS-8E2TX06-M, VS-8E2TX06FP-E Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES Hyperfast recovery time, extremely low Q rr 175 C maximum operating junction temperature For PFC CCM operation True 2 pin package Low forward voltage drop 2L TO-220AC 2L TO-220 FULL-PAK Low leakage current Base Fully isolated package (V = 2500 V ) INS RMS cathode 2 Compliant to RoHS directive 2002/95/EC Halogen-free according to IEC 61249-2-21 definition Designed and qualified for industrial level 1 3 1 2 DESCRIPTION/APPLICATIONS Cathode Anode Cathode Anode State of the art hyperfast recovery rectifiers designed with VS-8E2TX06 VS-8E2TX06FP optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. PRODUCT SUMMARY The planar structure and the platinum doped life time Package 2L TO-220AC, 2L TO-220 FP control guarantee the best overall performance, ruggedness I 8 A F(AV) and reliability characteristics. V 600 V R These devices are intended for use in PFC boost stage in the ac-to-dc section of SMPS, inverters or as freewheeling V at I 3.2 V F F diodes. t (typ.) 13 ns rr Their extremely optimized stored charge and low recovery T max. 175 C J current minimize the switching losses and reduce over Diode variation Single die dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V 600 V RRM T = 129 C C Average rectified forward current I 8 F(AV) FULL-PAK T = 71 C C A Non-repetitive peak surge current I T = 25 C 77 FSM J Peak repetitive forward current I 16 FM Operating junction and storage temperatures T , T - 65 to 175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 8 A - 2.5 3.2 F Forward voltage V F I = 8 A, T = 150 C - 1.6 2.0 F J V = V rated - 0.3 40 R R Reverse leakage current I A R T = 150 C, V = V rated - 30 400 J R R Junction capacitance C V = 600 V - 6 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Document Number: 93171 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 18-Aug-10 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com 1 VS-8E2TX06-E, VS-8E2TX06-M, VS-8E2TX06FP-E Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 13 18 F F R I = 8.0 A, dI /dt = 100 A/s, V = 30 V - 14 23 F F R I = 8 A F T = 25 C -16- J dI /dt = 200 A/s F Reverse recovery time t ns rr -35- V = 390 V R I = 8 A T = 125 C F J dI /dt = 600 A/s -25- F V = 390 V R I = 8 A T = 25 C F -2.3 - J dI /dt = 200 A/s F -3.8 - V = 390 V R Peak recovery current I A RRM I = 8 A T = 125 C F J dI /dt = 600 A/s -10- F V = 390 V R I = 8 A F T = 25 C -16- J dI /dt = 200 A/s F -62- V = 390 V R Reverse recovery charge Q nC rr I = 8 A T = 125 C F J dI /dt = 600 A/s - 131 - F V = 390 V R THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T - 65 - 175 C J Stg temperature range -2 2.4 Thermal resistance, R thJC junction to case FULL-PAK - 5 5.5 Thermal resistance, C/W R Typical socket mount - - 70 thJA junction to ambient per leg Typical thermal resistance, Mounting surface, flat, smooth R -0.5 - thCS case to heatsink and greased -2 - g Weight -0.07- oz. 6 12 kgf cm Mounting torque - (5) (10) (lbf in) Case style TO-220 8E2TX06 Marking device Case style TO-220 FULL-PAK 8E2TX06FP www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93171 2 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com Revision: 18-Aug-10