VS-10ETF0...FPPbF Series, VS-10ETF0...FP-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 10 A FEATURES Glass passivated pellet chip junction 2 150 C max. operation junction temperature Designed and qualified according to 2 JEDEC -JESD 47 1 3 Fully isolated package (V = 2500 V ) INS RMS 3 1 UL E78996 approved Cathode Anode TO-220 FULL-PAK Available Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRODUCT SUMMARY APPLICATIONS Package TO-220FP These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as I 10 A F(AV) well as in input rectification where severe restrictions on V 200 V, 400 V, 600 V R conducted EMI should be met. V at I 1.2 V F F DESCRIPTION I 160 A FSM t 50 ns The VS-10ETF0..FP... fast soft recovery rectifier series has rr been optimized for combined short reverse recovery time T max. 150 C J and low forward voltage drop. Diode variation Single die The glass passivation ensures stable reliable operation in Snap factor 0.5 the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS V 200 to 600 V RRM I Sinusoidal waveform 10 F(AV) A I 160 FSM t 1 A, 100 A/s 50 ns rr V 10 A, T = 25 C 1.2 V F J T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-10ETF02FPPbF, VS-10ETF02FP-M3 200 300 VS-10ETF04FPPbF, VS-10ETF04FP-M3 400 500 3 VS-10ETF06FPPbF, VS-10ETF06FP-M3 600 700 Revision: 11-Feb-16 Document Number: 94089 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-10ETF0...FPPbF Series, VS-10ETF0...FP-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 98 C, 180 conduction half sine wave 10 F(AV) C 10 ms sine pulse, rated V applied 150 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 160 10 ms sine pulse, rated V applied 112.5 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 160 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 1600 A s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop V 10 A, T = 25 C 1.2 V FM J Forward slope resistance r 23.5 m t T = 150 C J Threshold voltage V 0.85 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 3.0 J RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS I FM Reverse recovery time t 200 ns rr I at 10 A t F pk rr Reverse recovery current I 25 A/s 2.75 A rr t 25 C dir Reverse recovery charge Q 0.32 C rr dt Q rr Snap factor S0.6 I RM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance R DC operation 2.5 thJC junction to case Maximum thermal resistance R 62 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth, and greased 0.5 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 10ETF02FP Marking device Case style TO-220 FULL-PAK 10ETF04FP 10ETF06FP Revision: 11-Feb-16 Document Number: 94089 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000