VS-10ETF10FP-M3, VS-10ETF12FP-M3 www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 10 A FEATURES Glass passivated pellet chip junction 150 C max. operation junction temperature Designed and qualified according to JEDEC -JESD 47 1 2 1 Fully isolated package (V = 2500 V ) Cathode INS RMS Anode 2 UL pending 2L TO-220 FullPAK Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS PRIMARY CHARACTERISTICS These devices are intended for use in output rectification I 10 A F(AV) and freewheeling in inverters, choppers and converters as V 1000 V, 1200 V R well as in input rectification where severe restrictions on V at I 1.33 V conducted EMI should be met. F F I 140 A FSM DESCRIPTION t 80 ns rr The VS-10ETF1..FP... fast soft recovery rectifier series has T max. 150 C J been optimized for combined short reverse recovery time Snap factor 0.6 and low forward voltage drop. Package 2L TO-220 FullPAK The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. Circuit configuration Single MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS V 1000, 1200 V RRM I Sinusoidal waveform 10 F(AV) A I 140 FSM t 1 A, 100 A/s 80 ns rr V 10 A, T = 25 C 1.33 V F J T -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM RSM V , MAXIMUM PEAK I RRM RRM NON-REPETITIVE PEAK PART NUMBER REVERSE VOLTAGE AT 150 C REVERSE VOLTAGE V mA V VS-10ETF10FP-M3 1000 1100 4 VS-10ETF12FP-M3 1200 1300 Revision: 15-Sep-17 Document Number: 96294 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-10ETF10FP-M3, VS-10ETF12FP-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 95 C, 180 conduction half sine wave 10 F(AV) C 10 ms sine pulse, rated V applied 115 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 140 10 ms sine pulse, rated V applied 66 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 94 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 940 A s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop V 10 A, T = 25 C 1.33 V FM J Forward slope resistance r 22.9 m t T = 150 C J Threshold voltage V 0.96 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 4 J RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Reverse recovery time t 310 ns rr I FM I at 10 A F pk t rr Reverse recovery current I 25 A/s 4.7 A rr 25 C t dir Reverse recovery charge Q 1.05 C rr dt Q rr I Snap factor S0.6 RM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance R DC operation 2.5 thJC junction to case Maximum thermal resistance R 62 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth, and greased 0.5 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 10ETF10FP Marking device Case style 2L TO-220 FullPAK 10ETF12FP Revision: 15-Sep-17 Document Number: 96294 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000