CD214B-FS3G Bourns

Features Applications n RoHS compliant* n Switch Mode Power Supplies n Low profile n Portable equipment batteries n Low power loss, high efficiency n High frequency rectification n UL 94V-0 classification n DC/DC Converters n Telecommunications CD214B-FS3x Series Fast Response Rectifier Chip Diode General Information Portable communications, computing and video equipment manufacturers are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Glass Passivated Rectifiers for rectification applications in a compact chip package compatible with DO-214AA (SMB) size format. The Glass Passivated Rectifier Diodes offer a forward current of 3 A with a choice of repetitive peak reverse voltage of 200 V up to 800 V. Absolute Maximum Ratings ( T = 25 C Unless Otherwise Noted) A CD214B- Parameter Symbol Unit FS3D FS3G FS3J FS3K Maximum Repetitive Peak Reverse Voltage V 200 400 600 800 V RRM Maximum Average Forward Current I 3 A F(AV) Maximum Peak Forward Surge Current I 90 A FSM (8.3 ms Single Half Sine-Wave) Operating Junction Temperature Range T -65 to +175 C OPR Storage Temperature Range T -65 to +175 C STG Electrical Characteristics ( T = 25 C Unless Otherwise Noted) A Parameter Symbol Condition or Model Min. Typ. Max. Unit CD214B-FS3D 0.93 0.95 Maximum Instantaneous CD214B-FS3G 1.2 1.25 V Forward Voltage V I = 3 A F F CD214B-FS3J 1.5 1.7 (NOTE 1) CD214B-FS3K 1.9 2.2 DC Reverse Current I V = V 5 A R R RRM Reverse I = 0.5 A, F Recovery 35 nS I = 1.0 A, T R rr Time I = 0.25 A rr Typical Junction Capacitance C V = 4 V, f = 1.0 MHz 19 pF J R Junction to Typical 66 R JA Ambient Thermal C/W Resistance Junction to 8 (NOTE 2) R JL Lead NOTES: (1) Pulse width 300 microsecond, 1 % duty cycle. (2) Mounted on PCB with 5.0 x 5.0 mm (0.2 x 0.2 inch) copper pad areas. *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. *RoHS COMPLIANT VERSIONS AVAILABLE *RoHS COMPLIANT LEAD FREE LEAD FREE VERSIONS ARE RoHS COMPLIANT* CD214B-FS3x3312 - 2Series mm FastSMD Response Trimming Rectifier Potentiometer Chip Diode Performance Graphs Forward Current Derating Curve Max. Peak Forward Surge Current 120 3 100 8.3 ms Single Half 80 2 Sine-Wave (JEDEC Method) 60 Resistive or Inductive Load 40 1 PCB Mounted on 5.0 x 5.0 mm 20 (0.2 x 0.2 inch) Copper Pad Areas 0 0 010 100 02550 75 100 125 150 175 Number of Cycles 60 Hz Lead Temperature (C) Typical Instantaneous Forward Characteristics Typical Reverse Characteristics 10 100 CD214B-FS3G CD214B-FS3J CD214B-FS3D T = 150 C J 10 CD214B-FS3K 1 1 T = 125 C J 0.1 0.1 TT = 25 C=2 5CC a T = 25 C J 0.01 0.01 020 40 60 80 100 110 0.2 0.6 1.0 1.4 1.8 2.2 Percent of Rated Peak Reverse Voltage (%) Instantaneous Forward Voltage (Volts) Typical Junction Capacitance 200 100 T = 25 C 10 J f = 1.0 MHz V = 50 mVP-P sig 1 0.1 110 100 Reverse Voltage (Volts) Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. CD214A-B160R CD214A-B120R CD214A-B1100R CD214A-B140R 400 400 400 T = 25 C T = 25 C J T = 25 C J J f = 1.0 MHz f = 1.0 MHz f = 1.0 MHz V = 50 mVP-P V = 50 mVP-P sig V = 50 mVP-P sig sig 100 100 100 10 10 10 0.1 1.0 10 100 0.1 1.0 10 100 0.1 1.0 10 100 Reverse Voltage (Volts) Reverse Voltage (Volts) Reverse Voltage (Volts) Junction Capacitance (pF) Instantaneous Forward Current (A) Average Forward Rectified Current Junction Capacitance (pF) (Amps) Junction Capacitance (pF) Peak Forward Surge Current Instantaneous Reverse Current (mA) (Amps) Junction Capacitance (pF)