VS-10ETF..SPbF Series www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 10 A FEATURES Glass passivated pellet chip junction Base cathode Meets MSL level 1, per J-STD-020, + LF maximum peak of 260 C 2 Designed and qualified according to JEDEC -JESD 47 2 Material categorization: 3 for definitions of compliance please see 13 1 -- www.vishay.com/doc 99912 Anode Anode 2 TO-263AB (D PAK) APPLICATIONS Output rectification and freewheeling in inverters, PRODUCT SUMMARY choppers and converters 2 Package TO-263AB (D PAK) Input rectifications where severe restrictions on I 10 A F(AV) conducted EMI should be met V 1000 V, 1200 V R V at I 1.33 V DESCRIPTION F F I 155 A FSM The VS-10ETF..SPbF fast soft recovery rectifier series has t 80 ns rr been optimized for combined short reverse recovery time T max. 150 C and low forward voltage drop. J Diode variation Single die The glass passivation ensures stable reliable operation in Snap factor 0.6 the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 10 A F(AV) V 1000/1200 V RRM I 155 A FSM V 10 A, T = 25 C 1.33 V F J t 1 A, 100 A/s 80 ns rr T Range -40 to +150 C J VOLTAGE RATINGS V , MAXIMUM PEAK V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-10ETF10SPbF 1000 1100 4 VS-10ETF12SPbF 1200 1300 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 125 C, 180 conduction half sine wave 10 F(AV) C Maximum peak one cycle non-repetitive 10 ms sine pulse, rated V applied 130 A RRM I FSM surge current 10 ms sine pulse, no voltage reapplied 155 10 ms sine pulse, rated V applied 85 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 120 2 2 2 t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 1200 A s Maximum I Revision: 11-Feb-16 Document Number: 94094 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-10ETF..SPbF Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum forward voltage drop V 10 A, T = 25 C 1.33 V FM J Forward slope resistance r 22.9 m t T = 150 C J Threshold voltage V 0.96 V F(TO) T = 25 C 0.1 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 4 J RECOVERY CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Reverse recovery time t 310 ns I rr FM I at 10 A F pk t rr Reverse recovery current I 25 A/s 4.7 A rr t 25 C dir Reverse recovery charge Q 1.05 C rr dt Q rr I RM(REC) Typical snap factor S 0.6 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 1.5 thJC junction to case C/W Maximum thermal resistance, (1) R 62 thJA junction to ambient (PCB mount) Soldering temperature T 260 C S 2g Approximate weight 0.07 oz. 10ETF10S 2 Marking device Case style D PAK (SMD-220) 10ETF12S Note (1) 2 When mounted on 1 square (650 mm ) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W. For recommended footprint and soldering techniques refer to application note AN-994. Revision: 11-Feb-16 Document Number: 94094 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000